High mobility solution-processed OTFTs

Sung Kyu Park; Chung Chen Kuo; John E. Anthony; Thomas Nelson Jackson

High mobility solution-processed OTFTs

Sung Kyu Park, Chung Chen Kuo, John E. Anthony, Thomas Nelson Jackson

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Using bis(triisopropylsilylethynyl)pentacene (TIPS - pentacene), we have fabricated solution-processed OTFTs with mobility near 1.5 cm ²/V·s. This is the highest mobility reported to date for solution-processed OTFTs. The organic semiconductor thin films used in these devices require no high temperature processing and also show remarkable molecular ordering, possibly related to the observed high mobility. This work demonstrates that solution processed OTFTs with characteristics similar to vacuum deposited devices are possible and provides a possible path to low-cost organic electronics processing.

Original language	English (US)
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	105-108
Number of pages	4
Volume	2005
State	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: Dec 5 2005 → Dec 7 2005

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country	United States
City	Washington, DC, MD
Period	12/5/05 → 12/7/05

All Science Journal Classification (ASJC) codes

Engineering(all)

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@inproceedings{d00c75a2f2104b5f9df8a6cf036f827c,

title = "High mobility solution-processed OTFTs",

abstract = "Using bis(triisopropylsilylethynyl)pentacene (TIPS - pentacene), we have fabricated solution-processed OTFTs with mobility near 1.5 cm 2/V·s. This is the highest mobility reported to date for solution-processed OTFTs. The organic semiconductor thin films used in these devices require no high temperature processing and also show remarkable molecular ordering, possibly related to the observed high mobility. This work demonstrates that solution processed OTFTs with characteristics similar to vacuum deposited devices are possible and provides a possible path to low-cost organic electronics processing.",

author = "Park, {Sung Kyu} and Kuo, {Chung Chen} and Anthony, {John E.} and Jackson, {Thomas Nelson}",

year = "2005",

language = "English (US)",

isbn = "078039268X",

volume = "2005",

pages = "105--108",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

TY - GEN

T1 - High mobility solution-processed OTFTs

AU - Park, Sung Kyu

AU - Kuo, Chung Chen

AU - Anthony, John E.

AU - Jackson, Thomas Nelson

PY - 2005

Y1 - 2005

N2 - Using bis(triisopropylsilylethynyl)pentacene (TIPS - pentacene), we have fabricated solution-processed OTFTs with mobility near 1.5 cm 2/V·s. This is the highest mobility reported to date for solution-processed OTFTs. The organic semiconductor thin films used in these devices require no high temperature processing and also show remarkable molecular ordering, possibly related to the observed high mobility. This work demonstrates that solution processed OTFTs with characteristics similar to vacuum deposited devices are possible and provides a possible path to low-cost organic electronics processing.

AB - Using bis(triisopropylsilylethynyl)pentacene (TIPS - pentacene), we have fabricated solution-processed OTFTs with mobility near 1.5 cm 2/V·s. This is the highest mobility reported to date for solution-processed OTFTs. The organic semiconductor thin films used in these devices require no high temperature processing and also show remarkable molecular ordering, possibly related to the observed high mobility. This work demonstrates that solution processed OTFTs with characteristics similar to vacuum deposited devices are possible and provides a possible path to low-cost organic electronics processing.

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UR - http://www.scopus.com/inward/citedby.url?scp=33847746239&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847746239

SN - 078039268X

SN - 9780780392687

VL - 2005

SP - 105

EP - 108

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -