High-mobility spin-cast organic thin film transistors

Sung Kyu Park, Devin A. Mourey, Sankar Subramanian, John E. Anthony, Thomas N. Jackson

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Abstract

We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.

Original languageEnglish (US)
Article number043301
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
StatePublished - Aug 15 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, S. K., Mourey, D. A., Subramanian, S., Anthony, J. E., & Jackson, T. N. (2008). High-mobility spin-cast organic thin film transistors. Applied Physics Letters, 93(4), [043301]. https://doi.org/10.1063/1.2952769