High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

Kibum Kang, Saien Xie, Lujie Huang, Yimo Han, Pinshane Y. Huang, Kin Fai Mak, Cheol Joo Kim, David Muller, Jiwoong Park

Research output: Contribution to journalArticle

699 Citations (Scopus)

Abstract

The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS 2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30cm 2 V -1 s-1 at room temperature and 114 cm2 V-1s-1 at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.

Original languageEnglish (US)
Pages (from-to)656-660
Number of pages5
JournalNature
Volume520
Issue number7549
DOIs
StatePublished - Apr 30 2015

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Metals
Equipment and Supplies
Growth
Organic Chemicals
Semiconductors
Tungsten
Disulfides
Electrons
Technology
Temperature
molybdenum disulfide
gallium arsenide

All Science Journal Classification (ASJC) codes

  • General

Cite this

Kang, K., Xie, S., Huang, L., Han, Y., Huang, P. Y., Mak, K. F., ... Park, J. (2015). High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature, 520(7549), 656-660. https://doi.org/10.1038/nature14417
Kang, Kibum ; Xie, Saien ; Huang, Lujie ; Han, Yimo ; Huang, Pinshane Y. ; Mak, Kin Fai ; Kim, Cheol Joo ; Muller, David ; Park, Jiwoong. / High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. In: Nature. 2015 ; Vol. 520, No. 7549. pp. 656-660.
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Kang, K, Xie, S, Huang, L, Han, Y, Huang, PY, Mak, KF, Kim, CJ, Muller, D & Park, J 2015, 'High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity', Nature, vol. 520, no. 7549, pp. 656-660. https://doi.org/10.1038/nature14417

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. / Kang, Kibum; Xie, Saien; Huang, Lujie; Han, Yimo; Huang, Pinshane Y.; Mak, Kin Fai; Kim, Cheol Joo; Muller, David; Park, Jiwoong.

In: Nature, Vol. 520, No. 7549, 30.04.2015, p. 656-660.

Research output: Contribution to journalArticle

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Kang K, Xie S, Huang L, Han Y, Huang PY, Mak KF et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature. 2015 Apr 30;520(7549):656-660. https://doi.org/10.1038/nature14417