We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker SO-nm active layers. A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-μm channel length TFT, the linear region (VDS = 0.1 V) and saturation region mobilities increase from 0.4 cm2/V·s and 0.7 cm2/V·s for a 50-nm thick active layer a-Si:H device to 0.7 cm2/V·s and 1.2 cm2/V·s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering