High performance field-effect transistor based on multilayer tungsten disulfide

Xue Liu, Jin Hu, Chunlei Yue, Nicholas Della Fera, Yun Ling, Zhiqiang Mao, Jiang Wei

Research output: Contribution to journalArticle

74 Scopus citations

Abstract

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical devices with acceptable performance still remains as a challenge. Employing tungsten disulfide multilayer thin crystals, we demonstrate that using gold as the only contact metal and choosing appropriate thickness of the crystal, high performance transistor with on/off ratio of 108 and mobility up to 234 cm2 V-1 s-1 at room temperature can be realized in a simple device structure. Furthermore, low temperature study revealed that the high performance of our device is caused by the minimized Schottky barrier at the contact and the existence of a shallow impurity level around 80 meV right below the conduction band edge. From the analysis on temperature dependence of field-effect mobility, we conclude that strongly suppressed phonon scattering and relatively low charge impurity density are the key factors leading to the high mobility of our tungsten disulfide devices.

Original languageEnglish (US)
Pages (from-to)10396-10402
Number of pages7
JournalACS nano
Volume8
Issue number10
DOIs
StatePublished - Oct 28 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Liu, X., Hu, J., Yue, C., Della Fera, N., Ling, Y., Mao, Z., & Wei, J. (2014). High performance field-effect transistor based on multilayer tungsten disulfide. ACS nano, 8(10), 10396-10402. https://doi.org/10.1021/nn505253p