High performance GaN-on-Si power switch: Role of substrate bias in device characteristics

Rongming Chu, Daniel Zehnder, Brian Hughes, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages223-224
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

Fingerprint

Switches
Substrates
Field effect transistors
Electric potential
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chu, R., Zehnder, D., Hughes, B., & Boutros, K. (2011). High performance GaN-on-Si power switch: Role of substrate bias in device characteristics. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 223-224). [5994508] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994508
Chu, Rongming ; Zehnder, Daniel ; Hughes, Brian ; Boutros, Karim. / High performance GaN-on-Si power switch : Role of substrate bias in device characteristics. 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. pp. 223-224 (Device Research Conference - Conference Digest, DRC).
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abstract = "Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.",
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Chu, R, Zehnder, D, Hughes, B & Boutros, K 2011, High performance GaN-on-Si power switch: Role of substrate bias in device characteristics. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994508, Device Research Conference - Conference Digest, DRC, pp. 223-224, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994508

High performance GaN-on-Si power switch : Role of substrate bias in device characteristics. / Chu, Rongming; Zehnder, Daniel; Hughes, Brian; Boutros, Karim.

69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 223-224 5994508 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chu R, Zehnder D, Hughes B, Boutros K. High performance GaN-on-Si power switch: Role of substrate bias in device characteristics. In 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 223-224. 5994508. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994508