High performance GaN-on-Si power switch: Role of substrate bias in device characteristics

Rongming Chu, Daniel Zehnder, Brian Hughes, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages223-224
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Chu, R., Zehnder, D., Hughes, B., & Boutros, K. (2011). High performance GaN-on-Si power switch: Role of substrate bias in device characteristics. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 223-224). [5994508] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994508