High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics

Matthew J. Hollander, Ashish Agrawal, Michael S. Bresnehan, Michael Labella, Kathleen A. Trumbull, Randal Cavalero, Suman Datta, Joshua A. Robinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent years, hexagonal boron nitride (h-BN) has gained interest as a material for use in graphene based electronics, where its ultra-smooth two-dimensional structure, lack of dangling bonds, and high energy surface optical phonon modes are desirable when considering the effect of dielectric materials in introducing additional sources of scattering for carriers within graphene. Initial work has indicated that use of h-BN in place of SiO 2 supporting substrates can lead to 2-3x improvements in device performance [1,2], suggesting that h-BN may be an excellent choice as top-gate dielectric for graphene devices. In this work, we integrate h-BN with quasi-freestanding graphene (QFEG) for the first time and demonstrate a 2x improvement in radio frequency (RF) performance and the highest f T·L g product yet reported for h-BN integrated graphene devices (25 GHz·μm).

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages177-178
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

Fingerprint

Boron nitride
Gate dielectrics
Graphene
Dangling bonds
Interfacial energy
Electronic equipment
Graphene transistors
Scattering
Substrates
Graphene devices

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Hollander, M. J., Agrawal, A., Bresnehan, M. S., Labella, M., Trumbull, K. A., Cavalero, R., ... Robinson, J. A. (2012). High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 177-178). [6256986] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6256986
Hollander, Matthew J. ; Agrawal, Ashish ; Bresnehan, Michael S. ; Labella, Michael ; Trumbull, Kathleen A. ; Cavalero, Randal ; Datta, Suman ; Robinson, Joshua A. / High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics. 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. pp. 177-178 (Device Research Conference - Conference Digest, DRC).
@inproceedings{f1c8b7fa875c490bb5ee312e2e21843a,
title = "High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics",
abstract = "In recent years, hexagonal boron nitride (h-BN) has gained interest as a material for use in graphene based electronics, where its ultra-smooth two-dimensional structure, lack of dangling bonds, and high energy surface optical phonon modes are desirable when considering the effect of dielectric materials in introducing additional sources of scattering for carriers within graphene. Initial work has indicated that use of h-BN in place of SiO 2 supporting substrates can lead to 2-3x improvements in device performance [1,2], suggesting that h-BN may be an excellent choice as top-gate dielectric for graphene devices. In this work, we integrate h-BN with quasi-freestanding graphene (QFEG) for the first time and demonstrate a 2x improvement in radio frequency (RF) performance and the highest f T·L g product yet reported for h-BN integrated graphene devices (25 GHz·μm).",
author = "Hollander, {Matthew J.} and Ashish Agrawal and Bresnehan, {Michael S.} and Michael Labella and Trumbull, {Kathleen A.} and Randal Cavalero and Suman Datta and Robinson, {Joshua A.}",
year = "2012",
month = "10",
day = "5",
doi = "10.1109/DRC.2012.6256986",
language = "English (US)",
isbn = "9781467311618",
series = "Device Research Conference - Conference Digest, DRC",
pages = "177--178",
booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

}

Hollander, MJ, Agrawal, A, Bresnehan, MS, Labella, M, Trumbull, KA, Cavalero, R, Datta, S & Robinson, JA 2012, High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6256986, Device Research Conference - Conference Digest, DRC, pp. 177-178, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6256986

High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics. / Hollander, Matthew J.; Agrawal, Ashish; Bresnehan, Michael S.; Labella, Michael; Trumbull, Kathleen A.; Cavalero, Randal; Datta, Suman; Robinson, Joshua A.

70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 177-178 6256986 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics

AU - Hollander, Matthew J.

AU - Agrawal, Ashish

AU - Bresnehan, Michael S.

AU - Labella, Michael

AU - Trumbull, Kathleen A.

AU - Cavalero, Randal

AU - Datta, Suman

AU - Robinson, Joshua A.

PY - 2012/10/5

Y1 - 2012/10/5

N2 - In recent years, hexagonal boron nitride (h-BN) has gained interest as a material for use in graphene based electronics, where its ultra-smooth two-dimensional structure, lack of dangling bonds, and high energy surface optical phonon modes are desirable when considering the effect of dielectric materials in introducing additional sources of scattering for carriers within graphene. Initial work has indicated that use of h-BN in place of SiO 2 supporting substrates can lead to 2-3x improvements in device performance [1,2], suggesting that h-BN may be an excellent choice as top-gate dielectric for graphene devices. In this work, we integrate h-BN with quasi-freestanding graphene (QFEG) for the first time and demonstrate a 2x improvement in radio frequency (RF) performance and the highest f T·L g product yet reported for h-BN integrated graphene devices (25 GHz·μm).

AB - In recent years, hexagonal boron nitride (h-BN) has gained interest as a material for use in graphene based electronics, where its ultra-smooth two-dimensional structure, lack of dangling bonds, and high energy surface optical phonon modes are desirable when considering the effect of dielectric materials in introducing additional sources of scattering for carriers within graphene. Initial work has indicated that use of h-BN in place of SiO 2 supporting substrates can lead to 2-3x improvements in device performance [1,2], suggesting that h-BN may be an excellent choice as top-gate dielectric for graphene devices. In this work, we integrate h-BN with quasi-freestanding graphene (QFEG) for the first time and demonstrate a 2x improvement in radio frequency (RF) performance and the highest f T·L g product yet reported for h-BN integrated graphene devices (25 GHz·μm).

UR - http://www.scopus.com/inward/record.url?scp=84866902042&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866902042&partnerID=8YFLogxK

U2 - 10.1109/DRC.2012.6256986

DO - 10.1109/DRC.2012.6256986

M3 - Conference contribution

AN - SCOPUS:84866902042

SN - 9781467311618

T3 - Device Research Conference - Conference Digest, DRC

SP - 177

EP - 178

BT - 70th Device Research Conference, DRC 2012 - Conference Digest

ER -

Hollander MJ, Agrawal A, Bresnehan MS, Labella M, Trumbull KA, Cavalero R et al. High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics. In 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 177-178. 6256986. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6256986