High performance multilayer MoS2 transistors with scandium contacts

Saptarshi Das, Hong Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller

Research output: Contribution to journalArticle

1305 Citations (Scopus)

Abstract

While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm 2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.

Original languageEnglish (US)
Pages (from-to)100-105
Number of pages6
JournalNano letters
Volume13
Issue number1
DOIs
StatePublished - Jan 9 2013

Fingerprint

Scandium
Graphite
scandium
Ohmic contacts
Contact resistance
Graphene
Multilayers
Transistors
transistors
Crystals
flakes
Electric potential
contact resistance
electric contacts
graphene
Temperature
electric potential
room temperature
electronics
crystals

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Das, S., Chen, H. Y., Penumatcha, A. V., & Appenzeller, J. (2013). High performance multilayer MoS2 transistors with scandium contacts. Nano letters, 13(1), 100-105. https://doi.org/10.1021/nl303583v
Das, Saptarshi ; Chen, Hong Yan ; Penumatcha, Ashish Verma ; Appenzeller, Joerg. / High performance multilayer MoS2 transistors with scandium contacts. In: Nano letters. 2013 ; Vol. 13, No. 1. pp. 100-105.
@article{51c7f99224634ec78e0df6802f9cad80,
title = "High performance multilayer MoS2 transistors with scandium contacts",
abstract = "While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm 2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.",
author = "Saptarshi Das and Chen, {Hong Yan} and Penumatcha, {Ashish Verma} and Joerg Appenzeller",
year = "2013",
month = "1",
day = "9",
doi = "10.1021/nl303583v",
language = "English (US)",
volume = "13",
pages = "100--105",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

Das, S, Chen, HY, Penumatcha, AV & Appenzeller, J 2013, 'High performance multilayer MoS2 transistors with scandium contacts', Nano letters, vol. 13, no. 1, pp. 100-105. https://doi.org/10.1021/nl303583v

High performance multilayer MoS2 transistors with scandium contacts. / Das, Saptarshi; Chen, Hong Yan; Penumatcha, Ashish Verma; Appenzeller, Joerg.

In: Nano letters, Vol. 13, No. 1, 09.01.2013, p. 100-105.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High performance multilayer MoS2 transistors with scandium contacts

AU - Das, Saptarshi

AU - Chen, Hong Yan

AU - Penumatcha, Ashish Verma

AU - Appenzeller, Joerg

PY - 2013/1/9

Y1 - 2013/1/9

N2 - While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm 2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.

AB - While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm 2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.

UR - http://www.scopus.com/inward/record.url?scp=84872115141&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872115141&partnerID=8YFLogxK

U2 - 10.1021/nl303583v

DO - 10.1021/nl303583v

M3 - Article

C2 - 23240655

AN - SCOPUS:84872115141

VL - 13

SP - 100

EP - 105

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -