High performance multilayer MoS2 transistors with scandium contacts

Saptarshi Das, Hong Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller

Research output: Contribution to journalArticle

1468 Scopus citations

Abstract

While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm 2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.

Original languageEnglish (US)
Pages (from-to)100-105
Number of pages6
JournalNano letters
Volume13
Issue number1
DOIs
StatePublished - Jan 9 2013

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Das, S., Chen, H. Y., Penumatcha, A. V., & Appenzeller, J. (2013). High performance multilayer MoS2 transistors with scandium contacts. Nano letters, 13(1), 100-105. https://doi.org/10.1021/nl303583v