High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Seung Kyu Oh, Moon Uk Cho, James Dallas, Taehoon Jang, Dong Gyu Lee, Sara Pouladi, Jie Chen, Weijie Wang, Shahab Shervin, Hyunsoo Kim, Seungha Shin, Sukwon Choi, Joon Seop Kwak, Jae Hyun Ryou

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the I D of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at V DS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.

Original languageEnglish (US)
Article number133502
JournalApplied Physics Letters
Volume111
Issue number13
DOIs
StatePublished - Sep 25 2017

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field effect transistors
retarding
transistors
metal bonding
hybrid structures
tapes
electron gas
temperature measurement
thermal conductivity
copper
heating
electric potential
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Oh, Seung Kyu ; Cho, Moon Uk ; Dallas, James ; Jang, Taehoon ; Lee, Dong Gyu ; Pouladi, Sara ; Chen, Jie ; Wang, Weijie ; Shervin, Shahab ; Kim, Hyunsoo ; Shin, Seungha ; Choi, Sukwon ; Kwak, Joon Seop ; Ryou, Jae Hyun. / High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance. In: Applied Physics Letters. 2017 ; Vol. 111, No. 13.
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abstract = "We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the I D of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3{\%} with increasing drain bias from the peak current to the current at V DS = 20 V, which is close to that of the HFETs on Si (9.6{\%}), solving the problem of previous flexible AlGaN/GaN transistors.",
author = "Oh, {Seung Kyu} and Cho, {Moon Uk} and James Dallas and Taehoon Jang and Lee, {Dong Gyu} and Sara Pouladi and Jie Chen and Weijie Wang and Shahab Shervin and Hyunsoo Kim and Seungha Shin and Sukwon Choi and Kwak, {Joon Seop} and Ryou, {Jae Hyun}",
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Oh, SK, Cho, MU, Dallas, J, Jang, T, Lee, DG, Pouladi, S, Chen, J, Wang, W, Shervin, S, Kim, H, Shin, S, Choi, S, Kwak, JS & Ryou, JH 2017, 'High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance', Applied Physics Letters, vol. 111, no. 13, 133502. https://doi.org/10.1063/1.5004799

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance. / Oh, Seung Kyu; Cho, Moon Uk; Dallas, James; Jang, Taehoon; Lee, Dong Gyu; Pouladi, Sara; Chen, Jie; Wang, Weijie; Shervin, Shahab; Kim, Hyunsoo; Shin, Seungha; Choi, Sukwon; Kwak, Joon Seop; Ryou, Jae Hyun.

In: Applied Physics Letters, Vol. 111, No. 13, 133502, 25.09.2017.

Research output: Contribution to journalArticle

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AU - Oh, Seung Kyu

AU - Cho, Moon Uk

AU - Dallas, James

AU - Jang, Taehoon

AU - Lee, Dong Gyu

AU - Pouladi, Sara

AU - Chen, Jie

AU - Wang, Weijie

AU - Shervin, Shahab

AU - Kim, Hyunsoo

AU - Shin, Seungha

AU - Choi, Sukwon

AU - Kwak, Joon Seop

AU - Ryou, Jae Hyun

PY - 2017/9/25

Y1 - 2017/9/25

N2 - We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the I D of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at V DS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.

AB - We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the I D of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at V DS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.

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