High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Cui Zu Chang, Weiwei Zhao, Duk Y. Kim, Haijun Zhang, Badih A. Assaf, Don Heiman, Shou Cheng Zhang, Chaoxing Liu, Moses H.W. Chan, Jagadeesh S. Moodera

Research output: Contribution to journalArticle

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Abstract

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007h/e 2 (∼3.35 ± 1.76â €‰Î >

Original languageEnglish (US)
Pages (from-to)473-477
Number of pages5
JournalNature Materials
Volume14
Issue number5
DOIs
StatePublished - May 1 2015

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Chang, C. Z., Zhao, W., Kim, D. Y., Zhang, H., Assaf, B. A., Heiman, D., Zhang, S. C., Liu, C., Chan, M. H. W., & Moodera, J. S. (2015). High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator. Nature Materials, 14(5), 473-477. https://doi.org/10.1038/nmat4204