High pressure chemical vapor deposition (CVD) of hydrogenated amorphous silicon films and solar cells was demonstrated. The high pressure deposition is carried out in a closed stainless steel cylindrical chamber (HiP Equipment); 3.5 MPa SiH4 and 30 MPa He buffer gas are fed from a reservoir that loaded by a high pressure pump and a homebuilt cryopump. The small volume of the voids between the film layers also minimizes the stored pressure?volume energy and makes the process practical. The pressures involved are easily contained in appropriate steel reaction vessels. It appears unlikely that conventional activated deposition techniques such as PECVD could deposit uniform films into such extreme aspect ratio voids. The study demonstrated the benefit of HPCVD in increasing deposition rate and shown hydrogenation, electronic doping, and proof-of-concept solar cells.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering