High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Rongrui He, Todd D. Day, Justin R. Sparks, Nichole F. Sullivan, John V. Badding

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

High pressure chemical vapor deposition (CVD) of hydrogenated amorphous silicon films and solar cells was demonstrated. The high pressure deposition is carried out in a closed stainless steel cylindrical chamber (HiP Equipment); 3.5 MPa SiH4 and 30 MPa He buffer gas are fed from a reservoir that loaded by a high pressure pump and a homebuilt cryopump. The small volume of the voids between the film layers also minimizes the stored pressure?volume energy and makes the process practical. The pressures involved are easily contained in appropriate steel reaction vessels. It appears unlikely that conventional activated deposition techniques such as PECVD could deposit uniform films into such extreme aspect ratio voids. The study demonstrated the benefit of HPCVD in increasing deposition rate and shown hydrogenation, electronic doping, and proof-of-concept solar cells.

Original languageEnglish (US)
Pages (from-to)5939-5942
Number of pages4
JournalAdvanced Materials
Volume28
Issue number28
DOIs
StatePublished - Jan 1 2016

Fingerprint

Amorphous silicon
Chemical vapor deposition
Solar cells
Steel
Stainless Steel
Plasma enhanced chemical vapor deposition
Deposition rates
Hydrogenation
Aspect ratio
Buffers
Deposits
Stainless steel
Gases
Doping (additives)
Pumps

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

He, Rongrui ; Day, Todd D. ; Sparks, Justin R. ; Sullivan, Nichole F. ; Badding, John V. / High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells. In: Advanced Materials. 2016 ; Vol. 28, No. 28. pp. 5939-5942.
@article{9d21ae031d0345448446ad4bb166b952,
title = "High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells",
abstract = "High pressure chemical vapor deposition (CVD) of hydrogenated amorphous silicon films and solar cells was demonstrated. The high pressure deposition is carried out in a closed stainless steel cylindrical chamber (HiP Equipment); 3.5 MPa SiH4 and 30 MPa He buffer gas are fed from a reservoir that loaded by a high pressure pump and a homebuilt cryopump. The small volume of the voids between the film layers also minimizes the stored pressure?volume energy and makes the process practical. The pressures involved are easily contained in appropriate steel reaction vessels. It appears unlikely that conventional activated deposition techniques such as PECVD could deposit uniform films into such extreme aspect ratio voids. The study demonstrated the benefit of HPCVD in increasing deposition rate and shown hydrogenation, electronic doping, and proof-of-concept solar cells.",
author = "Rongrui He and Day, {Todd D.} and Sparks, {Justin R.} and Sullivan, {Nichole F.} and Badding, {John V.}",
year = "2016",
month = "1",
day = "1",
doi = "10.1002/adma.201600415",
language = "English (US)",
volume = "28",
pages = "5939--5942",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "28",

}

High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells. / He, Rongrui; Day, Todd D.; Sparks, Justin R.; Sullivan, Nichole F.; Badding, John V.

In: Advanced Materials, Vol. 28, No. 28, 01.01.2016, p. 5939-5942.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

AU - He, Rongrui

AU - Day, Todd D.

AU - Sparks, Justin R.

AU - Sullivan, Nichole F.

AU - Badding, John V.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - High pressure chemical vapor deposition (CVD) of hydrogenated amorphous silicon films and solar cells was demonstrated. The high pressure deposition is carried out in a closed stainless steel cylindrical chamber (HiP Equipment); 3.5 MPa SiH4 and 30 MPa He buffer gas are fed from a reservoir that loaded by a high pressure pump and a homebuilt cryopump. The small volume of the voids between the film layers also minimizes the stored pressure?volume energy and makes the process practical. The pressures involved are easily contained in appropriate steel reaction vessels. It appears unlikely that conventional activated deposition techniques such as PECVD could deposit uniform films into such extreme aspect ratio voids. The study demonstrated the benefit of HPCVD in increasing deposition rate and shown hydrogenation, electronic doping, and proof-of-concept solar cells.

AB - High pressure chemical vapor deposition (CVD) of hydrogenated amorphous silicon films and solar cells was demonstrated. The high pressure deposition is carried out in a closed stainless steel cylindrical chamber (HiP Equipment); 3.5 MPa SiH4 and 30 MPa He buffer gas are fed from a reservoir that loaded by a high pressure pump and a homebuilt cryopump. The small volume of the voids between the film layers also minimizes the stored pressure?volume energy and makes the process practical. The pressures involved are easily contained in appropriate steel reaction vessels. It appears unlikely that conventional activated deposition techniques such as PECVD could deposit uniform films into such extreme aspect ratio voids. The study demonstrated the benefit of HPCVD in increasing deposition rate and shown hydrogenation, electronic doping, and proof-of-concept solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84978955124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978955124&partnerID=8YFLogxK

U2 - 10.1002/adma.201600415

DO - 10.1002/adma.201600415

M3 - Article

C2 - 27174318

AN - SCOPUS:84978955124

VL - 28

SP - 5939

EP - 5942

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 28

ER -