High resistivity and high TCR vanadium oxide thin films for infrared imaging prepared by bias target ion beam deposition

Yao Jin, A. Basantani Hitesh, Adem Ozcelik, Thomas Nelson Jackson, Mark William Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Vanadium oxide (VOx) thin films have been intensively studied as an imaging material for uncooled microbolometers due to their low resistivity, high temperature coefficient of resistivity (TCR), and low 1/f noise. Our group has studied pulsed DC reactive sputtered VOx thin films while reactive ion beam sputtering has been exclusively used to fabricate the VOx thin films for commercial thermal imaging cameras. The typical resistivity of imaging-grade VOx thin films is in the range of 0.1 to 10 ohm-cm with a TCR from -2%/K to -3%/K. In this work, we report for the first time the use of a new biased target ion beam deposition tool to prepare vanadium oxide thin films. In this BTIBD system, ions with energy lower than 25ev are generated remotely and vanadium targets are negatively biased independently for sputtering. High TCR (>-4.5%/K) VOx thin films have been reproducibly prepared in the resistivity range of 103-104 ohm-cm by controlling the oxygen partial pressure using real-time control with a residual gas analyzer. These high resistivity films may be useful in next generation uncooled focal plane arrays for through film rather than lateral thermal resistors. This will improve the sensitivity through the higher TCR without increasing noise accompanied by higher resistance. We report on the processing parameters necessary to produce these films as well as details on how this novel deposition tool operates. We also report on controlled addition of alloy materials and their effects on VOx thin films' electrical properties.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXIX
DOIs
StatePublished - Sep 17 2013
Event39th Infrared Technology and Applications - Baltimore, MD, United States
Duration: Apr 29 2013May 3 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8704
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other39th Infrared Technology and Applications
CountryUnited States
CityBaltimore, MD
Period4/29/135/3/13

Fingerprint

Vanadium
vanadium oxides
Infrared Imaging
Infrared imaging
Resistivity
Ion beams
Oxide films
Oxides
Thin Films
ion beams
Thin films
electrical resistivity
Target
Coefficient
coefficients
thin films
Temperature
Sputtering
Biased
sputtering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Jin, Y., Hitesh, A. B., Ozcelik, A., Jackson, T. N., & Horn, M. W. (2013). High resistivity and high TCR vanadium oxide thin films for infrared imaging prepared by bias target ion beam deposition. In Infrared Technology and Applications XXXIX [87043C] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8704). https://doi.org/10.1117/12.2016277
Jin, Yao ; Hitesh, A. Basantani ; Ozcelik, Adem ; Jackson, Thomas Nelson ; Horn, Mark William. / High resistivity and high TCR vanadium oxide thin films for infrared imaging prepared by bias target ion beam deposition. Infrared Technology and Applications XXXIX. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Vanadium oxide (VOx) thin films have been intensively studied as an imaging material for uncooled microbolometers due to their low resistivity, high temperature coefficient of resistivity (TCR), and low 1/f noise. Our group has studied pulsed DC reactive sputtered VOx thin films while reactive ion beam sputtering has been exclusively used to fabricate the VOx thin films for commercial thermal imaging cameras. The typical resistivity of imaging-grade VOx thin films is in the range of 0.1 to 10 ohm-cm with a TCR from -2{\%}/K to -3{\%}/K. In this work, we report for the first time the use of a new biased target ion beam deposition tool to prepare vanadium oxide thin films. In this BTIBD system, ions with energy lower than 25ev are generated remotely and vanadium targets are negatively biased independently for sputtering. High TCR (>-4.5{\%}/K) VOx thin films have been reproducibly prepared in the resistivity range of 103-104 ohm-cm by controlling the oxygen partial pressure using real-time control with a residual gas analyzer. These high resistivity films may be useful in next generation uncooled focal plane arrays for through film rather than lateral thermal resistors. This will improve the sensitivity through the higher TCR without increasing noise accompanied by higher resistance. We report on the processing parameters necessary to produce these films as well as details on how this novel deposition tool operates. We also report on controlled addition of alloy materials and their effects on VOx thin films' electrical properties.",
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Jin, Y, Hitesh, AB, Ozcelik, A, Jackson, TN & Horn, MW 2013, High resistivity and high TCR vanadium oxide thin films for infrared imaging prepared by bias target ion beam deposition. in Infrared Technology and Applications XXXIX., 87043C, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8704, 39th Infrared Technology and Applications, Baltimore, MD, United States, 4/29/13. https://doi.org/10.1117/12.2016277

High resistivity and high TCR vanadium oxide thin films for infrared imaging prepared by bias target ion beam deposition. / Jin, Yao; Hitesh, A. Basantani; Ozcelik, Adem; Jackson, Thomas Nelson; Horn, Mark William.

Infrared Technology and Applications XXXIX. 2013. 87043C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8704).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Jin Y, Hitesh AB, Ozcelik A, Jackson TN, Horn MW. High resistivity and high TCR vanadium oxide thin films for infrared imaging prepared by bias target ion beam deposition. In Infrared Technology and Applications XXXIX. 2013. 87043C. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2016277