High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

R. J. Zeto, B. J. Rod, M. Dubey, M. H. Ervin, R. C. Piekarz, Susan E. Trolier-McKinstry, T. Su, J. F. Shepard

Research output: Contribution to conferencePaper

6 Citations (Scopus)

Abstract

Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

Original languageEnglish (US)
Pages89-92
Number of pages4
StatePublished - Dec 1 1998
EventProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz
Duration: Aug 24 1998Aug 27 1998

Other

OtherProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
CityMontreaux, Switz
Period8/24/988/27/98

Fingerprint

Argon
Platinum
MEMS
Masks
Ions
Electrodes
Graphite
Aluminum Oxide
Multilayer films
Reactive ion etching
Photoresists
Alumina
Gases
Scanning electron microscopy
lead titanate zirconate

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Zeto, R. J., Rod, B. J., Dubey, M., Ervin, M. H., Piekarz, R. C., Trolier-McKinstry, S. E., ... Shepard, J. F. (1998). High-resolution dry etch patterning of PZT for piezoelectric MEMS devices. 89-92. Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .
Zeto, R. J. ; Rod, B. J. ; Dubey, M. ; Ervin, M. H. ; Piekarz, R. C. ; Trolier-McKinstry, Susan E. ; Su, T. ; Shepard, J. F. / High-resolution dry etch patterning of PZT for piezoelectric MEMS devices. Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .4 p.
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title = "High-resolution dry etch patterning of PZT for piezoelectric MEMS devices",
abstract = "Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.",
author = "Zeto, {R. J.} and Rod, {B. J.} and M. Dubey and Ervin, {M. H.} and Piekarz, {R. C.} and Trolier-McKinstry, {Susan E.} and T. Su and Shepard, {J. F.}",
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language = "English (US)",
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Zeto, RJ, Rod, BJ, Dubey, M, Ervin, MH, Piekarz, RC, Trolier-McKinstry, SE, Su, T & Shepard, JF 1998, 'High-resolution dry etch patterning of PZT for piezoelectric MEMS devices' Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, 8/24/98 - 8/27/98, pp. 89-92.

High-resolution dry etch patterning of PZT for piezoelectric MEMS devices. / Zeto, R. J.; Rod, B. J.; Dubey, M.; Ervin, M. H.; Piekarz, R. C.; Trolier-McKinstry, Susan E.; Su, T.; Shepard, J. F.

1998. 89-92 Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

AU - Zeto, R. J.

AU - Rod, B. J.

AU - Dubey, M.

AU - Ervin, M. H.

AU - Piekarz, R. C.

AU - Trolier-McKinstry, Susan E.

AU - Su, T.

AU - Shepard, J. F.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

AB - Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

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M3 - Paper

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Zeto RJ, Rod BJ, Dubey M, Ervin MH, Piekarz RC, Trolier-McKinstry SE et al. High-resolution dry etch patterning of PZT for piezoelectric MEMS devices. 1998. Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .