High-resolution dry etch patterning of PZT for piezoelectric MEMS devices

R. J. Zeto, B. J. Rod, M. Dubey, M. H. Ervin, R. C. Piekarz, Susan E. Trolier-McKinstry, T. Su, J. F. Shepard

Research output: Contribution to conferencePaper

6 Scopus citations

Abstract

Dry etch patterning of lead zirconate titanate with self-aligned top and bottom platinum electrodes was demonstrated using a combination of reactive ion etching of PZT and argon ion milling of Pt. Monochlorotetrafluoroethane (HC2ClF4) etch gas and a Pt etch mask were employed for PZT patterning. PZT etch rates in the range 13-110nm/min were measured as a function of rf discharge power for alumina, graphite, and ardel electrode shields in a conventional parallel plate reactor. The top and bottom platinum films were patterned by argon ion milling with a photoresist etch mask which was applied at the outset of the process and left in place throughout patterning. Etched profiles of Pt(200nm)/PZT(500nm)/Pt(150nm) multilayer films were characterized by SEM and exhibited submicron definition.

Original languageEnglish (US)
Pages89-92
Number of pages4
StatePublished - Dec 1 1998
EventProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz
Duration: Aug 24 1998Aug 27 1998

Other

OtherProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
CityMontreaux, Switz
Period8/24/988/27/98

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Zeto, R. J., Rod, B. J., Dubey, M., Ervin, M. H., Piekarz, R. C., Trolier-McKinstry, S. E., Su, T., & Shepard, J. F. (1998). High-resolution dry etch patterning of PZT for piezoelectric MEMS devices. 89-92. Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .