High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra

J. W. Gabrys, P. M. Lenahan, W. Weber

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

We use extremely high sensitivity spin dependent recombination (SDR) measurements to evaluate hot hole injection induced damage in short channel MOSFETs. Our 29Si hyperfine SDR results provide a moderately precise measure of hot carrier defect electronic localization, hybridization, and (arguably) defect back bond angles. Our results futhermore provide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the most sensitive magnetic resonance measurements of any kind ever made in solids.

Original languageEnglish (US)
Pages (from-to)273-276
Number of pages4
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
StatePublished - Aug 1993

Fingerprint

Hot carriers
field effect transistors
Magnetic resonance measurement
damage
Defects
high resolution
Integrated circuits
Transistors
defects
integrated circuits
magnetic resonance
transistors
injection
sensitivity
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs : 29Si hyperfine spectra. / Gabrys, J. W.; Lenahan, P. M.; Weber, W.

In: Microelectronic Engineering, Vol. 22, No. 1-4, 08.1993, p. 273-276.

Research output: Contribution to journalArticle

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