MOSFET reliability studies have primarily been based upon the application of quasi-static analysis techniques, although MOSFETs are fully dynamical systems. Here, we present a method for the extraction of damage metrics based upon the transient response of the drain-to-source current Ids to a step input to the gate of the device. This new dynamical technique produces a measure of device degradation that is an order of magnitude more sensitive than previous methods and also allows characterization of the device in situations better matching actual operation. We are also able to track the evolution of damage to the device in real time, which makes it possible to predict the remaining time to failure.
|Original language||English (US)|
|Number of pages||9|
|Journal||IEEE Transactions on Instrumentation and Measurement|
|State||Published - Jun 1 2010|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering