High speed anisotropic etching of Pyrex® for microsystems applications

Abhijat Goyal, Vincent Hood, Srinivas A. Tadigadapa

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We report high speed etching of glass (Pyrex® 7740) substrates using an inductively coupled plasma (ICP) reactive ion etching (RIE) process employing sulfur hexafluoride/argon (SF6/Ar) based chemistry. Electroplated Ni over a patterned Cr/Au seed layer was used as the hard mask for etching. Detailed process characterization was performed by varying the process parameters which include substrate temperature, ICP power, substrate power, operating pressure, distance of substrate holder from ICP source and composition and flow rates of the etching gases. An rms surface roughness of 1.97 nm at a high etch rate of 0.536 μm/min was achieved by process optimization. We used least square fit to find the direction of maximum variance in the process parametric space and to reduce the dimensionality of the process parametric space. The etch rate was then linearly related to a new variable termed as the etch rate number.

Original languageEnglish (US)
Pages (from-to)657-663
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume352
Issue number6-7 SPEC. ISS.
DOIs
StatePublished - May 15 2006

Fingerprint

Anisotropic etching
Microsystems
borosilicate glass
Inductively coupled plasma
high speed
etching
Etching
Substrates
Sulfur Hexafluoride
Sulfur hexafluoride
sulfur hexafluoride
Plasma sources
Plasma etching
Argon
Reactive ion etching
holders
Seed
Masks
seeds
surface roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Goyal, Abhijat ; Hood, Vincent ; Tadigadapa, Srinivas A. / High speed anisotropic etching of Pyrex® for microsystems applications. In: Journal of Non-Crystalline Solids. 2006 ; Vol. 352, No. 6-7 SPEC. ISS. pp. 657-663.
@article{421b75cd2df945c996c6f888eeaeb5e2,
title = "High speed anisotropic etching of Pyrex{\circledR} for microsystems applications",
abstract = "We report high speed etching of glass (Pyrex{\circledR} 7740) substrates using an inductively coupled plasma (ICP) reactive ion etching (RIE) process employing sulfur hexafluoride/argon (SF6/Ar) based chemistry. Electroplated Ni over a patterned Cr/Au seed layer was used as the hard mask for etching. Detailed process characterization was performed by varying the process parameters which include substrate temperature, ICP power, substrate power, operating pressure, distance of substrate holder from ICP source and composition and flow rates of the etching gases. An rms surface roughness of 1.97 nm at a high etch rate of 0.536 μm/min was achieved by process optimization. We used least square fit to find the direction of maximum variance in the process parametric space and to reduce the dimensionality of the process parametric space. The etch rate was then linearly related to a new variable termed as the etch rate number.",
author = "Abhijat Goyal and Vincent Hood and Tadigadapa, {Srinivas A.}",
year = "2006",
month = "5",
day = "15",
doi = "10.1016/j.jnoncrysol.2005.11.063",
language = "English (US)",
volume = "352",
pages = "657--663",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "6-7 SPEC. ISS.",

}

High speed anisotropic etching of Pyrex® for microsystems applications. / Goyal, Abhijat; Hood, Vincent; Tadigadapa, Srinivas A.

In: Journal of Non-Crystalline Solids, Vol. 352, No. 6-7 SPEC. ISS., 15.05.2006, p. 657-663.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High speed anisotropic etching of Pyrex® for microsystems applications

AU - Goyal, Abhijat

AU - Hood, Vincent

AU - Tadigadapa, Srinivas A.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - We report high speed etching of glass (Pyrex® 7740) substrates using an inductively coupled plasma (ICP) reactive ion etching (RIE) process employing sulfur hexafluoride/argon (SF6/Ar) based chemistry. Electroplated Ni over a patterned Cr/Au seed layer was used as the hard mask for etching. Detailed process characterization was performed by varying the process parameters which include substrate temperature, ICP power, substrate power, operating pressure, distance of substrate holder from ICP source and composition and flow rates of the etching gases. An rms surface roughness of 1.97 nm at a high etch rate of 0.536 μm/min was achieved by process optimization. We used least square fit to find the direction of maximum variance in the process parametric space and to reduce the dimensionality of the process parametric space. The etch rate was then linearly related to a new variable termed as the etch rate number.

AB - We report high speed etching of glass (Pyrex® 7740) substrates using an inductively coupled plasma (ICP) reactive ion etching (RIE) process employing sulfur hexafluoride/argon (SF6/Ar) based chemistry. Electroplated Ni over a patterned Cr/Au seed layer was used as the hard mask for etching. Detailed process characterization was performed by varying the process parameters which include substrate temperature, ICP power, substrate power, operating pressure, distance of substrate holder from ICP source and composition and flow rates of the etching gases. An rms surface roughness of 1.97 nm at a high etch rate of 0.536 μm/min was achieved by process optimization. We used least square fit to find the direction of maximum variance in the process parametric space and to reduce the dimensionality of the process parametric space. The etch rate was then linearly related to a new variable termed as the etch rate number.

UR - http://www.scopus.com/inward/record.url?scp=33646069306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646069306&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2005.11.063

DO - 10.1016/j.jnoncrysol.2005.11.063

M3 - Article

AN - SCOPUS:33646069306

VL - 352

SP - 657

EP - 663

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 6-7 SPEC. ISS.

ER -