High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

David F. Brown, Keisuke Shinohara, Andrea L. Corrion, Rongming Chu, Adam Williams, Joel C. Wong, Ivan Alvarado-Rodriguez, Robert Grabar, Michael Johnson, Colleen M. Butler, Dayward Santos, Shawn D. Burnham, John F. Robinson, Daniel Zehnder, Samuel Jungjin Kim, Thomas C. Oh, Miroslav Micovic

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

Original languageEnglish (US)
Article number6574209
Pages (from-to)1118-1120
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
StatePublished - Aug 8 2013

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Microwave amplifiers
Ohmic contacts
Epilayers
Field effect transistors
Power amplifiers
Heterojunctions
Switches
Electric fields
Degradation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Brown, D. F., Shinohara, K., Corrion, A. L., Chu, R., Williams, A., Wong, J. C., ... Micovic, M. (2013). High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates. IEEE Electron Device Letters, 34(9), 1118-1120. [6574209]. https://doi.org/10.1109/LED.2013.2273172
Brown, David F. ; Shinohara, Keisuke ; Corrion, Andrea L. ; Chu, Rongming ; Williams, Adam ; Wong, Joel C. ; Alvarado-Rodriguez, Ivan ; Grabar, Robert ; Johnson, Michael ; Butler, Colleen M. ; Santos, Dayward ; Burnham, Shawn D. ; Robinson, John F. ; Zehnder, Daniel ; Kim, Samuel Jungjin ; Oh, Thomas C. ; Micovic, Miroslav. / High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 9. pp. 1118-1120.
@article{3ce756d0bf0b4d259fc44fdd8312eb3e,
title = "High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates",
abstract = "We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.",
author = "Brown, {David F.} and Keisuke Shinohara and Corrion, {Andrea L.} and Rongming Chu and Adam Williams and Wong, {Joel C.} and Ivan Alvarado-Rodriguez and Robert Grabar and Michael Johnson and Butler, {Colleen M.} and Dayward Santos and Burnham, {Shawn D.} and Robinson, {John F.} and Daniel Zehnder and Kim, {Samuel Jungjin} and Oh, {Thomas C.} and Miroslav Micovic",
year = "2013",
month = "8",
day = "8",
doi = "10.1109/LED.2013.2273172",
language = "English (US)",
volume = "34",
pages = "1118--1120",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

Brown, DF, Shinohara, K, Corrion, AL, Chu, R, Williams, A, Wong, JC, Alvarado-Rodriguez, I, Grabar, R, Johnson, M, Butler, CM, Santos, D, Burnham, SD, Robinson, JF, Zehnder, D, Kim, SJ, Oh, TC & Micovic, M 2013, 'High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates', IEEE Electron Device Letters, vol. 34, no. 9, 6574209, pp. 1118-1120. https://doi.org/10.1109/LED.2013.2273172

High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates. / Brown, David F.; Shinohara, Keisuke; Corrion, Andrea L.; Chu, Rongming; Williams, Adam; Wong, Joel C.; Alvarado-Rodriguez, Ivan; Grabar, Robert; Johnson, Michael; Butler, Colleen M.; Santos, Dayward; Burnham, Shawn D.; Robinson, John F.; Zehnder, Daniel; Kim, Samuel Jungjin; Oh, Thomas C.; Micovic, Miroslav.

In: IEEE Electron Device Letters, Vol. 34, No. 9, 6574209, 08.08.2013, p. 1118-1120.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

AU - Brown, David F.

AU - Shinohara, Keisuke

AU - Corrion, Andrea L.

AU - Chu, Rongming

AU - Williams, Adam

AU - Wong, Joel C.

AU - Alvarado-Rodriguez, Ivan

AU - Grabar, Robert

AU - Johnson, Michael

AU - Butler, Colleen M.

AU - Santos, Dayward

AU - Burnham, Shawn D.

AU - Robinson, John F.

AU - Zehnder, Daniel

AU - Kim, Samuel Jungjin

AU - Oh, Thomas C.

AU - Micovic, Miroslav

PY - 2013/8/8

Y1 - 2013/8/8

N2 - We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

AB - We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

UR - http://www.scopus.com/inward/record.url?scp=84883203018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883203018&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2273172

DO - 10.1109/LED.2013.2273172

M3 - Article

AN - SCOPUS:84883203018

VL - 34

SP - 1118

EP - 1120

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 6574209

ER -