High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates

David F. Brown, Keisuke Shinohara, Andrea L. Corrion, Rongming Chu, Adam Williams, Joel C. Wong, Ivan Alvarado-Rodriguez, Robert Grabar, Michael Johnson, Colleen M. Butler, Dayward Santos, Shawn D. Burnham, John F. Robinson, Daniel Zehnder, Samuel Jungjin Kim, Thomas C. Oh, Miroslav Micovic

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

Original languageEnglish (US)
Article number6574209
Pages (from-to)1118-1120
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
Publication statusPublished - Aug 8 2013

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Brown, D. F., Shinohara, K., Corrion, A. L., Chu, R., Williams, A., Wong, J. C., ... Micovic, M. (2013). High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates. IEEE Electron Device Letters, 34(9), 1118-1120. [6574209]. https://doi.org/10.1109/LED.2013.2273172