We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 ωmm), enhancement-mode operation (VTH=+0.35 V, and excellent high-frequency performance (fT/fmax=50/ 120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering