High-speed, low-voltage complementary heterostructure FET circuit technology

R. A. Kiehl, J. Yates, L. F. Palmateer, S. L. Wright, D. J. Frank, Thomas Nelson Jackson, J. F. Degelormo, A. J. Fleischman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

A III-V complementary heterostructure FET circuit technology which offers high-speed at low supply voltages has been demonstrated. This circuit technology is based on the vertical integration of p-channel quantum-well FETs with n-channel FETs fabricated in the underlying layers of a single-growth AlGaAs/GaAs structure. Key features of the p-FET heterostructure design and fabrication technology are discussed, and results on the electrical characteristics and the performance of high-speed ring oscillator circuits are presented. Delays of 144 and 59 ps are obtained in 0.8 and 0.5 μm gate-length circuits at a 1.25 V supply, which are the fastest speeds yet reported for room-temperature complementary heterostructure FET circuits at low supply voltages.

Original languageEnglish (US)
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherPubl by IEEE
Pages101-104
Number of pages4
ISBN (Print)078030196X
StatePublished - Jan 1 1992
Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
Duration: Oct 20 1991Oct 23 1991

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

Other13th Annual GaAs IC Symposium Technical Digest
CityMonterey, CA, USA
Period10/20/9110/23/91

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Kiehl, R. A., Yates, J., Palmateer, L. F., Wright, S. L., Frank, D. J., Jackson, T. N., Degelormo, J. F., & Fleischman, A. J. (1992). High-speed, low-voltage complementary heterostructure FET circuit technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 101-104). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.