High-Tc field-effect transistor-like structure made from YBCO ultrathin films (Invited Paper)

Xiaoxing Xi, Q. Li, C. Doughty, A. Walkenhorst, S. N. Mao, C. Kwon, S. Bhattacharya, Alp T. Findikoglu, T. Venkatesan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-Tc field-effect transistor-like structure (SuFET) was made rhich consisted of an ultrathin YBa2Cu3O7-x (YBCO) film, a dielectric SrTiO3 layer, and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20%. A comparable amount of modulation was obtained in normal state resistivity and T c. The Jc of the channel layer was changed by approximately 90% when a gate voltage was applied, showing the promise to build a field effect device using high-Tc superconductors.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRajendra Singh, Martin Nisenoff, Davor Pavuna
PublisherPubl by Int Soc for Optical Engineering
Pages118-125
Number of pages8
ISBN (Print)0819407283
StatePublished - Jan 1 1992
EventProgress in High-Temperature Superconducting Transistors and Other Devices II - San Jose, CA, USA
Duration: Sep 12 1991Sep 13 1991

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1597
ISSN (Print)0277-786X

Other

OtherProgress in High-Temperature Superconducting Transistors and Other Devices II
CitySan Jose, CA, USA
Period9/12/919/13/91

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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