High temperature and current density induced degradation of multi-layer graphene

Baoming Wang, Md Amanul Haque, Alexander E. Mag-Isa, Jae Hyun Kim, Hak Joo Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 107 A/cm2. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900-1000°C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.

Original languageEnglish (US)
Article number163103
JournalApplied Physics Letters
Volume107
Issue number16
DOIs
StatePublished - Oct 19 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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