High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

Yao O. Jin; David Saint John; Nikolas J. Podraza; Thomas N. Jackson; Mark W. Horn

doi:10.1117/1.OE.54.3.037101

High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

Yao O. Jin, David Saint John, Nikolas J. Podraza, Thomas N. Jackson, Mark W. Horn

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Molybdenum oxide (MoO_x ) and nickel oxide (NiO_x ) thin films were deposited by reactive biased target ion beam deposition. MoO_x thin film resistivity varied from 3 to 2000 ω· cm with a temperature coefficient of resistance (TCR) from ?1.7% to ?3.2%?K, and NiO_x thin film resistivity varied from 1 to 300ω· cm with a TCR from ?2.2% to ?3.3%?K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoO_x and NiO_x thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoO_x or NiO_x thin films offer improved process control for resistive temperature sensors.

Original language	English (US)
Article number	037101
Journal	Optical Engineering
Volume	54
Issue number	3
DOIs	https://doi.org/10.1117/1.OE.54.3.037101
State	Published - Mar 2015

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Engineering(all)

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title = "High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications",

abstract = "Molybdenum oxide (MoOx ) and nickel oxide (NiOx ) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 ω· cm with a temperature coefficient of resistance (TCR) from ?1.7% to ?3.2%?K, and NiOx thin film resistivity varied from 1 to 300ω· cm with a TCR from ?2.2% to ?3.3%?K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.",

author = "Jin, {Yao O.} and John, {David Saint} and Podraza, {Nikolas J.} and Jackson, {Thomas N.} and Horn, {Mark W.}",

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language = "English (US)",

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T1 - High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

AU - Jin, Yao O.

AU - John, David Saint

AU - Podraza, Nikolas J.

AU - Jackson, Thomas N.

AU - Horn, Mark W.

PY - 2015/3

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N2 - Molybdenum oxide (MoOx ) and nickel oxide (NiOx ) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 ω· cm with a temperature coefficient of resistance (TCR) from ?1.7% to ?3.2%?K, and NiOx thin film resistivity varied from 1 to 300ω· cm with a TCR from ?2.2% to ?3.3%?K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

AB - Molybdenum oxide (MoOx ) and nickel oxide (NiOx ) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 ω· cm with a temperature coefficient of resistance (TCR) from ?1.7% to ?3.2%?K, and NiOx thin film resistivity varied from 1 to 300ω· cm with a TCR from ?2.2% to ?3.3%?K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

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