High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers

Charles A. Lewinsohn, Lucille A. Giannuzzi, Charles E. Bakis, Richard E. Tressler

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°-1400°C, 190-500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS-6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.

Original languageEnglish (US)
Pages (from-to)407-413
Number of pages7
JournalJournal of the American Ceramic Society
Volume82
Issue number2
StatePublished - Feb 1 1999

Fingerprint

Microstructural evolution
Silicon carbide
Creep
Vapors
Fibers
Temperature
Grain growth
Chemical vapor deposition
Annealing
Transmission electron microscopy
Microstructure
silicon carbide

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Lewinsohn, Charles A. ; Giannuzzi, Lucille A. ; Bakis, Charles E. ; Tressler, Richard E. / High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers. In: Journal of the American Ceramic Society. 1999 ; Vol. 82, No. 2. pp. 407-413.
@article{a07529081b7349f0941d2d95d6eb22e3,
title = "High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers",
abstract = "The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°-1400°C, 190-500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS-6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.",
author = "Lewinsohn, {Charles A.} and Giannuzzi, {Lucille A.} and Bakis, {Charles E.} and Tressler, {Richard E.}",
year = "1999",
month = "2",
day = "1",
language = "English (US)",
volume = "82",
pages = "407--413",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "2",

}

High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers. / Lewinsohn, Charles A.; Giannuzzi, Lucille A.; Bakis, Charles E.; Tressler, Richard E.

In: Journal of the American Ceramic Society, Vol. 82, No. 2, 01.02.1999, p. 407-413.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers

AU - Lewinsohn, Charles A.

AU - Giannuzzi, Lucille A.

AU - Bakis, Charles E.

AU - Tressler, Richard E.

PY - 1999/2/1

Y1 - 1999/2/1

N2 - The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°-1400°C, 190-500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS-6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.

AB - The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°-1400°C, 190-500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS-6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.

UR - http://www.scopus.com/inward/record.url?scp=0033078430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033078430&partnerID=8YFLogxK

M3 - Article

VL - 82

SP - 407

EP - 413

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 2

ER -