High temperature CW operation of GaAs/AlGaAs high barrier gain offset VCSELs

Jeffrey M. Catchmark, R. A. Morgan, M. T. Asom, G. D. Guth, M. W. Focht, T. Mullally, D. N. Christodoulides

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Greater than 150 °C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150 °C. These results are compared to a low barrier VCSEL of similar design.

Original languageEnglish (US)
Pages (from-to)2136-2138
Number of pages3
JournalElectronics Letters
Volume30
Issue number25
DOIs
StatePublished - Dec 8 1994

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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