High Temperature, High Energy Density Dielectrics for Power Electronics Applications

Dennis P. Shay, Clive A. Randall

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3 Citations (Scopus)

Abstract

Mn and/or rare earth-doped xCaTiO3 - (1-x)CaMeO3 dielectrics, where Me=Hf or Zr and x=0.7, 0.8, and 0.9 were developed to yield materials with room temperature relative permittivities of εr ~ 150-170, thermal coefficients of capacitance (TCC) of ± 15.8% to ± 16.4% from -50 to 150°C, and band gaps of ~ 3.3-3.6 eV as determined by UV-Vis spectroscopy. Un-doped single layer capacitors exhibited room temperature energy densities as large as 9.0 J/cm3, but showed a drastic decrease in energy density above 100°C. When doped with 0.5 mol% Mn, the temperature dependence of the breakdown strength was minimized, and energy densities similar to room temperature values (9.5 J/cm3) were observed up to 200°C. At 300°C, energy densities as large as 6.5 J/cm3 were measured. These observations suggest that with further reductions in grain size and dielectric layer thickness, the xCaTiO3 - (1-x)CaMeO3 system is a strong candidate for integration into future power electronics applications. To further improve the high temperature, high field reliability of these material systems, rare earth donor doping has been utilized. Initially, 1 mol% doping with Dy, Gd, and Sm showed the most significant reduction in high temperature, high field conductivity. Further investigation of Dy co-doping with 0.5 mol% Mn, Mg, and (Mn+Mg) showed the most significant increase in Ca(Ti0.8Hf0.2)O3 resistivity from 4.61 MΩ.m with only Mn doping to 176 GΩ.cm with Dy and Mg co-doping. Material systems were characterized using capacitance and dielectric loss vs. temperature, current-voltage (I-V), UV-Vis spectroscopy for band gap determination, and polarization vs. field measurements.

Original languageEnglish (US)
JournalSAE International Journal of Materials and Manufacturing
Volume6
Issue number1
StatePublished - Jan 1 2013

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Power electronics
Doping (additives)
Temperature
Ultraviolet spectroscopy
Rare earths
Energy gap
Capacitance
Dielectric losses
Capacitors
Permittivity
Polarization
Electric potential

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Industrial and Manufacturing Engineering

Cite this

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title = "High Temperature, High Energy Density Dielectrics for Power Electronics Applications",
abstract = "Mn and/or rare earth-doped xCaTiO3 - (1-x)CaMeO3 dielectrics, where Me=Hf or Zr and x=0.7, 0.8, and 0.9 were developed to yield materials with room temperature relative permittivities of εr ~ 150-170, thermal coefficients of capacitance (TCC) of ± 15.8{\%} to ± 16.4{\%} from -50 to 150°C, and band gaps of ~ 3.3-3.6 eV as determined by UV-Vis spectroscopy. Un-doped single layer capacitors exhibited room temperature energy densities as large as 9.0 J/cm3, but showed a drastic decrease in energy density above 100°C. When doped with 0.5 mol{\%} Mn, the temperature dependence of the breakdown strength was minimized, and energy densities similar to room temperature values (9.5 J/cm3) were observed up to 200°C. At 300°C, energy densities as large as 6.5 J/cm3 were measured. These observations suggest that with further reductions in grain size and dielectric layer thickness, the xCaTiO3 - (1-x)CaMeO3 system is a strong candidate for integration into future power electronics applications. To further improve the high temperature, high field reliability of these material systems, rare earth donor doping has been utilized. Initially, 1 mol{\%} doping with Dy, Gd, and Sm showed the most significant reduction in high temperature, high field conductivity. Further investigation of Dy co-doping with 0.5 mol{\%} Mn, Mg, and (Mn+Mg) showed the most significant increase in Ca(Ti0.8Hf0.2)O3 resistivity from 4.61 MΩ.m with only Mn doping to 176 GΩ.cm with Dy and Mg co-doping. Material systems were characterized using capacitance and dielectric loss vs. temperature, current-voltage (I-V), UV-Vis spectroscopy for band gap determination, and polarization vs. field measurements.",
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