High temperature piezoelectric materials for actuators and sensors

Shujun Zhang, Edward Alberta, Richard E. Eitel, Paul W. Rehrig, Wesley Hackenberger, Clive A. Randall, Thomas R. Shrout

13 Scopus citations

Abstract

(1-x)BiScO 3-xPbTiO 3 (BSPT) polycrystalline material with a morphotropic phase boundary (MPB) composition (x=0.64) exhibits a high Curie temperature (T C) about 450°C and good piezoelectric properties with d 33 values around 460pC/N. Manganese (Mn) modified BSPT was utilized in order to increase the electric resistivity and RC time constant. At 450°C, BSPT66-Mn ceramic exhibited a resistivity of 3×10 7 Ohm.cm and RC value of 0.08s, respectively, significantly higher than the values for undoped BSPT and commercial PZT5 materials. The manganese additive shifts TC of BSPT materials to lower temperatures, which were found to be 442°C and 462°C for modified BSPT64 and BSPT66, respectively. The piezoelectric behavior for the modified BSPT material was found to deteriorate slightly owing to the hardening effect of manganese, but showed superior temperature stability and enhanced resistivity. The detailed temperature dependent properties were studied in this work and compared to commercial PZT5 materials. The complete set of materials constants, including the elastic s ij, c ij, piezoelectric d ij, e ij, g ij, h ij, dielectric ε ij, β ij and electromechanical k ij values were determined using resonance technique and derived from the experimental data.

Original languageEnglish (US)
Article number37
Pages (from-to)279-286
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5761
DOIs
Publication statusPublished - Sep 29 2005
EventSmart Structures and Materials 2005 - Active Materials: Behavior and Mechanics - San Diego, CA, United States
Duration: Mar 7 2005Mar 10 2005

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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