The characteristics of Pt Schottky diodes on n-type GaN in hydrogen and propane are reported for the first time. This response from 200-400°C has been characterized by current-voltage measurements, revealing that the diodes are able to detect hydrogen from 200-400°C and propane from 300-400°C. The high temperature stability of Pt diodes on GaN has been investigated by long term annealing at 400°C in Ar or 20% O2 in Ar. The diodes have been held at 400°C for 500 h without degradation of their electrical characteristics or response to hydrogen-containing gases.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry