High temperature Pt Schottky diode gas sensors on n-type GaN

B. P. Luther, S. D. Wolter, S. E. Mohney

Research output: Contribution to journalArticle

179 Scopus citations

Abstract

The characteristics of Pt Schottky diodes on n-type GaN in hydrogen and propane are reported for the first time. This response from 200-400°C has been characterized by current-voltage measurements, revealing that the diodes are able to detect hydrogen from 200-400°C and propane from 300-400°C. The high temperature stability of Pt diodes on GaN has been investigated by long term annealing at 400°C in Ar or 20% O2 in Ar. The diodes have been held at 400°C for 500 h without degradation of their electrical characteristics or response to hydrogen-containing gases.

Original languageEnglish (US)
Pages (from-to)164-168
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume56
Issue number1
DOIs
StatePublished - Jul 1 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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