High-temperature reverse-bias stressing of thin gate oxides in power transistors

Research output: Contribution to journalConference article

Abstract

High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ∼0.5 μm trench width and ∼1 μm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H+s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.

Original languageEnglish (US)
Pages (from-to)45-52
Number of pages8
JournalECS Transactions
Volume64
Issue number8
DOIs
StatePublished - Jan 1 2014
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Oct 5 2014Oct 9 2014

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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