High-temperature reverse-bias stressing of thin gate oxides in power transistors

Research output: Contribution to journalConference article

Abstract

High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ∼0.5 μm trench width and ∼1 μm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H+s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.

Original languageEnglish (US)
Pages (from-to)45-52
Number of pages8
JournalECS Transactions
Volume64
Issue number8
DOIs
StatePublished - Jan 1 2014
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Oct 5 2014Oct 9 2014

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Oxides
Degradation
Hydrogen
Temperature
Field effect transistors
Threshold voltage
Protons
Scanning electron microscopy
Power transistors
Metals
Negative bias temperature instability

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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title = "High-temperature reverse-bias stressing of thin gate oxides in power transistors",
abstract = "High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ∼0.5 μm trench width and ∼1 μm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H+s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.",
author = "Suliman, {Samia A.} and Awadelkarim, {Osama O.} and J. Hao and M. Rioux",
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High-temperature reverse-bias stressing of thin gate oxides in power transistors. / Suliman, Samia A.; Awadelkarim, Osama O.; Hao, J.; Rioux, M.

In: ECS Transactions, Vol. 64, No. 8, 01.01.2014, p. 45-52.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High-temperature reverse-bias stressing of thin gate oxides in power transistors

AU - Suliman, Samia A.

AU - Awadelkarim, Osama O.

AU - Hao, J.

AU - Rioux, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ∼0.5 μm trench width and ∼1 μm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H+s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.

AB - High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ∼0.5 μm trench width and ∼1 μm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H+s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.

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