High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

James M. LeBeau, Jesse S. Jur, Daniel J. Lichtenwalner, H. Spalding Craft, Jon Paul Maria, Angus I. Kingon, Dmitri O. Klenov, Joël Cagnon, Susanne Stemmer

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The thermal stability of Dy Ox HfSiON and Ho Ox HfSiON gate dielectric stacks on silicon was studied by scanning transmission electron microscopy techniques and correlated with their electrical characteristics. Intermixing of the rare-earth elements with the HfSiON was observed, but there was no diffusion into the interfacial Si O2. Rapid thermal annealing (1000 °C) produced little detectable change in the concentration profile of the rare-earth elements but caused thinning of the interfacial Si O2 layer along with a corresponding increase in the rare-earth oxide layer thickness. These reactions could be explained with oxygen deficiency in the rare-earth oxide layer and its greater thermodynamic stability relative to Si O2. Negative flat band voltage shifts were observed relative to a control sample with no Dy Ox or Ho Ox. Mechanisms by which the observed microstructure changes could give rise to negative flatband voltage shifts are discussed.

Original languageEnglish (US)
Article number112912
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
StatePublished - Apr 1 2008

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threshold voltage
rare earth elements
oxides
shift
hypoxia
electric potential
thermal stability
thermodynamics
transmission electron microscopy
microstructure
scanning electron microscopy
annealing
silicon
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

LeBeau, James M. ; Jur, Jesse S. ; Lichtenwalner, Daniel J. ; Craft, H. Spalding ; Maria, Jon Paul ; Kingon, Angus I. ; Klenov, Dmitri O. ; Cagnon, Joël ; Stemmer, Susanne. / High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control. In: Applied Physics Letters. 2008 ; Vol. 92, No. 11.
@article{b2e640230dd24315a4574023eb8db1fd,
title = "High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control",
abstract = "The thermal stability of Dy Ox HfSiON and Ho Ox HfSiON gate dielectric stacks on silicon was studied by scanning transmission electron microscopy techniques and correlated with their electrical characteristics. Intermixing of the rare-earth elements with the HfSiON was observed, but there was no diffusion into the interfacial Si O2. Rapid thermal annealing (1000 °C) produced little detectable change in the concentration profile of the rare-earth elements but caused thinning of the interfacial Si O2 layer along with a corresponding increase in the rare-earth oxide layer thickness. These reactions could be explained with oxygen deficiency in the rare-earth oxide layer and its greater thermodynamic stability relative to Si O2. Negative flat band voltage shifts were observed relative to a control sample with no Dy Ox or Ho Ox. Mechanisms by which the observed microstructure changes could give rise to negative flatband voltage shifts are discussed.",
author = "LeBeau, {James M.} and Jur, {Jesse S.} and Lichtenwalner, {Daniel J.} and Craft, {H. Spalding} and Maria, {Jon Paul} and Kingon, {Angus I.} and Klenov, {Dmitri O.} and Jo{\"e}l Cagnon and Susanne Stemmer",
year = "2008",
month = "4",
day = "1",
doi = "10.1063/1.2901036",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

LeBeau, JM, Jur, JS, Lichtenwalner, DJ, Craft, HS, Maria, JP, Kingon, AI, Klenov, DO, Cagnon, J & Stemmer, S 2008, 'High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control', Applied Physics Letters, vol. 92, no. 11, 112912. https://doi.org/10.1063/1.2901036

High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control. / LeBeau, James M.; Jur, Jesse S.; Lichtenwalner, Daniel J.; Craft, H. Spalding; Maria, Jon Paul; Kingon, Angus I.; Klenov, Dmitri O.; Cagnon, Joël; Stemmer, Susanne.

In: Applied Physics Letters, Vol. 92, No. 11, 112912, 01.04.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

AU - LeBeau, James M.

AU - Jur, Jesse S.

AU - Lichtenwalner, Daniel J.

AU - Craft, H. Spalding

AU - Maria, Jon Paul

AU - Kingon, Angus I.

AU - Klenov, Dmitri O.

AU - Cagnon, Joël

AU - Stemmer, Susanne

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The thermal stability of Dy Ox HfSiON and Ho Ox HfSiON gate dielectric stacks on silicon was studied by scanning transmission electron microscopy techniques and correlated with their electrical characteristics. Intermixing of the rare-earth elements with the HfSiON was observed, but there was no diffusion into the interfacial Si O2. Rapid thermal annealing (1000 °C) produced little detectable change in the concentration profile of the rare-earth elements but caused thinning of the interfacial Si O2 layer along with a corresponding increase in the rare-earth oxide layer thickness. These reactions could be explained with oxygen deficiency in the rare-earth oxide layer and its greater thermodynamic stability relative to Si O2. Negative flat band voltage shifts were observed relative to a control sample with no Dy Ox or Ho Ox. Mechanisms by which the observed microstructure changes could give rise to negative flatband voltage shifts are discussed.

AB - The thermal stability of Dy Ox HfSiON and Ho Ox HfSiON gate dielectric stacks on silicon was studied by scanning transmission electron microscopy techniques and correlated with their electrical characteristics. Intermixing of the rare-earth elements with the HfSiON was observed, but there was no diffusion into the interfacial Si O2. Rapid thermal annealing (1000 °C) produced little detectable change in the concentration profile of the rare-earth elements but caused thinning of the interfacial Si O2 layer along with a corresponding increase in the rare-earth oxide layer thickness. These reactions could be explained with oxygen deficiency in the rare-earth oxide layer and its greater thermodynamic stability relative to Si O2. Negative flat band voltage shifts were observed relative to a control sample with no Dy Ox or Ho Ox. Mechanisms by which the observed microstructure changes could give rise to negative flatband voltage shifts are discussed.

UR - http://www.scopus.com/inward/record.url?scp=41149136070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149136070&partnerID=8YFLogxK

U2 - 10.1063/1.2901036

DO - 10.1063/1.2901036

M3 - Article

AN - SCOPUS:41149136070

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112912

ER -