High-Tm relaxor ferroelectrics: 0.3BiScO3-0.6PbTiO3-0.1Pb(Mn1/3Nb2/3 ) O3

Jungho Ryu; Shashank Priya; Kenji Uchino

doi:10.1063/1.1536028

High-T_m relaxor ferroelectrics: 0.3BiScO₃-0.6PbTiO₃-0.1Pb(Mn_1/3Nb_2/3 ) O₃

Jungho Ryu, Shashank Priya, Kenji Uchino

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Abstract

The development of high-T_m relaxor materials for high-temperature high-power density electrotransduction applications and high-temperature capacitors in automobile applications was studied. The relaxor behavior was confirmed by studying polarization reversal and frequency and temperature dependent dielectric constant behavior. It was found that the relaxor behavior arose due to the creation of the chemical heterogeneity by localized cationic ordering which depends on the substitution rate.

Original language	English (US)
Pages (from-to)	251-253
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	2
DOIs	https://doi.org/10.1063/1.1536028
State	Published - Jan 13 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1536028

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abstract = "The development of high-Tm relaxor materials for high-temperature high-power density electrotransduction applications and high-temperature capacitors in automobile applications was studied. The relaxor behavior was confirmed by studying polarization reversal and frequency and temperature dependent dielectric constant behavior. It was found that the relaxor behavior arose due to the creation of the chemical heterogeneity by localized cationic ordering which depends on the substitution rate.",

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AU - Priya, Shashank

AU - Uchino, Kenji

PY - 2003/1/13

Y1 - 2003/1/13

N2 - The development of high-Tm relaxor materials for high-temperature high-power density electrotransduction applications and high-temperature capacitors in automobile applications was studied. The relaxor behavior was confirmed by studying polarization reversal and frequency and temperature dependent dielectric constant behavior. It was found that the relaxor behavior arose due to the creation of the chemical heterogeneity by localized cationic ordering which depends on the substitution rate.

AB - The development of high-Tm relaxor materials for high-temperature high-power density electrotransduction applications and high-temperature capacitors in automobile applications was studied. The relaxor behavior was confirmed by studying polarization reversal and frequency and temperature dependent dielectric constant behavior. It was found that the relaxor behavior arose due to the creation of the chemical heterogeneity by localized cationic ordering which depends on the substitution rate.

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High-T_m relaxor ferroelectrics: 0.3BiScO₃-0.6PbTiO₃-0.1Pb(Mn_1/3Nb_2/3 ) O₃

Abstract

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