High voltage (450 V) GaN Schottky rectifiers

Z. Z. Bandić, P. M. Bridger, E. C. Piquette, T. C. McGill, R. P. Vaudo, V. M. Phanse, J. M. Redwing

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Abstract

We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm2 and a saturation current density of 10-5 A/cm2 at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2±0.7) × 106 V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.

Original languageEnglish (US)
Pages (from-to)1266-1268
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number9
DOIs
StatePublished - Mar 1 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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