High-voltage high-current vertical geometry Ga2O3 rectifiers

Minghan Xian, Chaker Fares, Patrick Carey, Fan Ren, Marko Tadjer, Yu Te Liao, Chin Wei Chang, Jenshan Lin, Ribhu Sharma, Mark E. Law, Peter E. Raad, Pavel L. Komarov, Zahabul Islam, Aman Haque, Akito Kuramata, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There are continuing rapid developments in vertical geometry Ga2O3 for high voltage switching applications. Ga2O3 is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping and the availability of large diameter, relatively inexpensive substrates. These include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are already cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy tremendous advantages in terms of process maturity, an advantage that is especially true for Si, where the ability to precisely process the material has resulted in devices such as super-junctions that surpass the unipolar "limit". Continued development of low defect substrates, optimized epi growth and surface treatments and improved device design and processing methods for Ga2O3 are still required to push the experimental results closer to their theoretical values. Even 3 μm epi layers with doping concentration of 1016 cm-3 should have a theoretical breakdown voltage of ∼1800V. The actual experimental value of VB is currently well below the theoretical predictions. Thermal management is a key issue in Ga2O3 power devices for practical high current devices and initial studies have appeared on both the experimental and theoretical fronts. We summarize progress in edge termination design, temperature measurement using thermoreflectance-based thermography to measure the thermal rise and decay of the active diodes, failure under forward bias and development of large current (up to 130A) arrays.

Original languageEnglish (US)
Title of host publicationOxide-based Materials and Devices XI
EditorsDavid J. Rogers, David C. Look, Ferechteh H. Teherani
PublisherSPIE
ISBN (Electronic)9781510633254
DOIs
StatePublished - Jan 1 2020
EventOxide-based Materials and Devices XI 2020 - San Francisco, United States
Duration: Feb 3 2020Feb 6 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11281
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOxide-based Materials and Devices XI 2020
CountryUnited States
CitySan Francisco
Period2/3/202/6/20

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Xian, M., Fares, C., Carey, P., Ren, F., Tadjer, M., Liao, Y. T., Chang, C. W., Lin, J., Sharma, R., Law, M. E., Raad, P. E., Komarov, P. L., Islam, Z., Haque, A., Kuramata, A., & Pearton, S. J. (2020). High-voltage high-current vertical geometry Ga2O3 rectifiers. In D. J. Rogers, D. C. Look, & F. H. Teherani (Eds.), Oxide-based Materials and Devices XI [112810J] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11281). SPIE. https://doi.org/10.1117/12.2550769