High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Y. Cao, R. Chu, R. Li, M. Chen, R. Chang, B. Hughes

Research output: Contribution to journalArticle

64 Scopus citations

Abstract

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Original languageEnglish (US)
Article number062103
JournalApplied Physics Letters
Volume108
Issue number6
DOIs
StatePublished - Feb 8 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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