Abstract
Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3578-3582 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 25 |
| Issue number | 26 |
| DOIs | |
| State | Published - Jul 12 2013 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides. / Moyer, Jarrett A.; Eaton, Craig; Engel-Herbert, Roman.
In: Advanced Materials, Vol. 25, No. 26, 12.07.2013, p. 3578-3582.Research output: Contribution to journal › Article
TY - JOUR
T1 - Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides
AU - Moyer, Jarrett A.
AU - Eaton, Craig
AU - Engel-Herbert, Roman
PY - 2013/7/12
Y1 - 2013/7/12
N2 - Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.
AB - Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84879990209&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879990209&partnerID=8YFLogxK
U2 - 10.1002/adma.201300900
DO - 10.1002/adma.201300900
M3 - Article
C2 - 23703901
AN - SCOPUS:84879990209
VL - 25
SP - 3578
EP - 3582
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 26
ER -