Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides

Jarrett A. Moyer, Craig Eaton, Roman Engel-Herbert

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.

Original languageEnglish (US)
Pages (from-to)3578-3582
Number of pages5
JournalAdvanced Materials
Volume25
Issue number26
DOIs
StatePublished - Jul 12 2013

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Perovskite
Oxides
Electrodes
Chemical stability
Molecular beam epitaxy
Thin films
Temperature
perovskite

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Moyer, Jarrett A. ; Eaton, Craig ; Engel-Herbert, Roman. / Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides. In: Advanced Materials. 2013 ; Vol. 25, No. 26. pp. 3578-3582.
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Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides. / Moyer, Jarrett A.; Eaton, Craig; Engel-Herbert, Roman.

In: Advanced Materials, Vol. 25, No. 26, 12.07.2013, p. 3578-3582.

Research output: Contribution to journalArticle

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