Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

K. C. Ku, S. J. Potashnik, R. F. Wang, S. H. Chun, P. Schiffer, N. Samarth, M. J. Seong, A. Mascarenhas, E. Johnston-Halperin, R. C. Myers, A. C. Gossard, D. D. Awschalom

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310 Scopus citations

Abstract

The Curie temperatures up to 150 K were reported in low-temperature annealed [Ga,Mn]As epilayers. The higher Curie temperatures were found to result from an enhanced free hole density. It was found that in addition to the carrier concentration, the sample thickness limited the maximum attainable Curie temperature in the material.

Original languageEnglish (US)
Pages (from-to)2302-2304
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number14
DOIs
StatePublished - Apr 7 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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