Highly oriented lead zirconium titanate thin films: Growth, control of texture, and its effect on dielectric properties

S. Kalpat, Kenji Uchino

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

Highly oriented lead-zirconium-titanate (PZT) thin films have been grown by reactive rf-magnetron sputtering using multielemental metallic targets. The effects of deposition parameters on the film composition and texture evolution have been established. The partial pressure of oxygen (O2) and the heating rates during postdeposition anneal have been identified as critical parameters for the growth of highly oriented (111) and (100) PZT films. In order to control the growth of (111) and (100) orientation it was important to understand the interplay between these two parameters. Texture evolution mechanisms for the growth of oriented films have been proposed based on the effect of O2/argon flow and heating rates on the crystallization kinetics. The effects of crystal orientation on the dielectric and ferroelectric properties of PZT films have also been investigated.

Original languageEnglish (US)
Pages (from-to)2703-2710
Number of pages8
JournalJournal of Applied Physics
Volume90
Issue number6
DOIs
StatePublished - Sep 15 2001

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dielectric properties
textures
thin films
heating
partial pressure
magnetron sputtering
flow velocity
argon
crystallization
kinetics
oxygen
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{a6bec492befd4efeb943a1016b01be5b,
title = "Highly oriented lead zirconium titanate thin films: Growth, control of texture, and its effect on dielectric properties",
abstract = "Highly oriented lead-zirconium-titanate (PZT) thin films have been grown by reactive rf-magnetron sputtering using multielemental metallic targets. The effects of deposition parameters on the film composition and texture evolution have been established. The partial pressure of oxygen (O2) and the heating rates during postdeposition anneal have been identified as critical parameters for the growth of highly oriented (111) and (100) PZT films. In order to control the growth of (111) and (100) orientation it was important to understand the interplay between these two parameters. Texture evolution mechanisms for the growth of oriented films have been proposed based on the effect of O2/argon flow and heating rates on the crystallization kinetics. The effects of crystal orientation on the dielectric and ferroelectric properties of PZT films have also been investigated.",
author = "S. Kalpat and Kenji Uchino",
year = "2001",
month = "9",
day = "15",
doi = "10.1063/1.1385580",
language = "English (US)",
volume = "90",
pages = "2703--2710",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

Highly oriented lead zirconium titanate thin films : Growth, control of texture, and its effect on dielectric properties. / Kalpat, S.; Uchino, Kenji.

In: Journal of Applied Physics, Vol. 90, No. 6, 15.09.2001, p. 2703-2710.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Highly oriented lead zirconium titanate thin films

T2 - Growth, control of texture, and its effect on dielectric properties

AU - Kalpat, S.

AU - Uchino, Kenji

PY - 2001/9/15

Y1 - 2001/9/15

N2 - Highly oriented lead-zirconium-titanate (PZT) thin films have been grown by reactive rf-magnetron sputtering using multielemental metallic targets. The effects of deposition parameters on the film composition and texture evolution have been established. The partial pressure of oxygen (O2) and the heating rates during postdeposition anneal have been identified as critical parameters for the growth of highly oriented (111) and (100) PZT films. In order to control the growth of (111) and (100) orientation it was important to understand the interplay between these two parameters. Texture evolution mechanisms for the growth of oriented films have been proposed based on the effect of O2/argon flow and heating rates on the crystallization kinetics. The effects of crystal orientation on the dielectric and ferroelectric properties of PZT films have also been investigated.

AB - Highly oriented lead-zirconium-titanate (PZT) thin films have been grown by reactive rf-magnetron sputtering using multielemental metallic targets. The effects of deposition parameters on the film composition and texture evolution have been established. The partial pressure of oxygen (O2) and the heating rates during postdeposition anneal have been identified as critical parameters for the growth of highly oriented (111) and (100) PZT films. In order to control the growth of (111) and (100) orientation it was important to understand the interplay between these two parameters. Texture evolution mechanisms for the growth of oriented films have been proposed based on the effect of O2/argon flow and heating rates on the crystallization kinetics. The effects of crystal orientation on the dielectric and ferroelectric properties of PZT films have also been investigated.

UR - http://www.scopus.com/inward/record.url?scp=0038843965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038843965&partnerID=8YFLogxK

U2 - 10.1063/1.1385580

DO - 10.1063/1.1385580

M3 - Article

AN - SCOPUS:0038843965

VL - 90

SP - 2703

EP - 2710

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -