Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)

D. Kitchen, Anthony Raymond Richardella, P. Roushan, J. M. Tang, M. E. Flatt́, A. Yazdani

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A scanning-tunneling-microscopy-substitution technique is used to incorporate single Mn atoms into Ga sites in GaAs (110) surfaces. The electronic states near a single Mn in the acceptor configuration produce a strong in-gap resonance associated with the acceptor level. The isolated Mn acceptor is probed in both p -type and n -type environments to access the neutral and ionized acceptor configurations. The Mn acceptor at the surface substitution site shares bulk characteristics that compare well with tight-binding calculations. The anisotropic structure of the Mn hole state plays an important role in hole-mediated interactions between the Mn acceptors. Isolated Mn pairs show a strong interaction dependence on crystal orientation and spacing. Certain pair orientations produce a strong splitting of the acceptor level into two levels with bondinglike and antibondinglike symmetries. A tight-binding model relates the acceptor level splitting and the spin-spin interaction energy J.

Original languageEnglish (US)
Article number09G515
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
StatePublished - May 21 2007

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interactions
substitutes
configurations
scanning tunneling microscopy
spacing
symmetry
electronics
crystals
atoms
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kitchen, D., Richardella, A. R., Roushan, P., Tang, J. M., Flatt́, M. E., & Yazdani, A. (2007). Hole-mediated interactions of Mn acceptors on GaAs (110) (invited). Journal of Applied Physics, 101(9), [09G515]. https://doi.org/10.1063/1.2694511
Kitchen, D. ; Richardella, Anthony Raymond ; Roushan, P. ; Tang, J. M. ; Flatt́, M. E. ; Yazdani, A. / Hole-mediated interactions of Mn acceptors on GaAs (110) (invited). In: Journal of Applied Physics. 2007 ; Vol. 101, No. 9.
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Kitchen, D, Richardella, AR, Roushan, P, Tang, JM, Flatt́, ME & Yazdani, A 2007, 'Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)', Journal of Applied Physics, vol. 101, no. 9, 09G515. https://doi.org/10.1063/1.2694511

Hole-mediated interactions of Mn acceptors on GaAs (110) (invited). / Kitchen, D.; Richardella, Anthony Raymond; Roushan, P.; Tang, J. M.; Flatt́, M. E.; Yazdani, A.

In: Journal of Applied Physics, Vol. 101, No. 9, 09G515, 21.05.2007.

Research output: Contribution to journalArticle

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AU - Yazdani, A.

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