Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Patrick M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticle

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Abstract

We report electron spin resonance (ESR) measurements of E′-center (a "trivalent silicon" center in SiO2) density as well as capacitance versus voltage (C-V) measurements on γ-irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation-induced Pb -center (a "trivalent silicon" center at the Si/SiO2 interface) occupation as a function of the Fermi level at the Si/SiO2 interface. These measurements indicate that the Pb centers are neutral when the Fermi level is at mid-gap. Since the Pb centers are largely responsible for the radiation-induced interface states, one may take ΔVmg Cox/e (where ΔVmg is the "mid-gap" C-V shift, Cox is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation-induced E′ density equals ΔVmg C ox/e in oxides grown in both stream and dry oxygen. Etch-back experiments demonstrate that the E′ centers are concentrated very near the Si/SiO2 interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E′ density and ΔVmg annealing characteristics are virtually identical. We conclude that the E′ centers are largely responsible for the deep hole traps in thermal SiO2 on silicon. This observation coupled with observations regarding the Pb center indicates that two intrinsic centers, both involving silicon atoms lacking one bond to an oxygen atom, are largely responsible for the two electrically significant aspects of radiation damage in MOS devices: charge buildup in the oxide and interface-state creation at the Si/SiO2 interface.

Original languageEnglish (US)
Pages (from-to)3495-3499
Number of pages5
JournalJournal of Applied Physics
Volume55
Issue number10
DOIs
StatePublished - Dec 1 1984

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metal oxides
traps
silicon
oxides
capacitance
electron paramagnetic resonance
radiation
radiation damage
occupation
electrical measurement
oxygen atoms
annealing
shift
electric potential
oxygen
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{de8b0363c7d841dd85489b144e90c7e8,
title = "Hole traps and trivalent silicon centers in metal/oxide/silicon devices",
abstract = "We report electron spin resonance (ESR) measurements of E′-center (a {"}trivalent silicon{"} center in SiO2) density as well as capacitance versus voltage (C-V) measurements on γ-irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation-induced Pb -center (a {"}trivalent silicon{"} center at the Si/SiO2 interface) occupation as a function of the Fermi level at the Si/SiO2 interface. These measurements indicate that the Pb centers are neutral when the Fermi level is at mid-gap. Since the Pb centers are largely responsible for the radiation-induced interface states, one may take ΔVmg Cox/e (where ΔVmg is the {"}mid-gap{"} C-V shift, Cox is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation-induced E′ density equals ΔVmg C ox/e in oxides grown in both stream and dry oxygen. Etch-back experiments demonstrate that the E′ centers are concentrated very near the Si/SiO2 interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E′ density and ΔVmg annealing characteristics are virtually identical. We conclude that the E′ centers are largely responsible for the deep hole traps in thermal SiO2 on silicon. This observation coupled with observations regarding the Pb center indicates that two intrinsic centers, both involving silicon atoms lacking one bond to an oxygen atom, are largely responsible for the two electrically significant aspects of radiation damage in MOS devices: charge buildup in the oxide and interface-state creation at the Si/SiO2 interface.",
author = "Lenahan, {Patrick M.} and Dressendorfer, {P. V.}",
year = "1984",
month = "12",
day = "1",
doi = "10.1063/1.332937",
language = "English (US)",
volume = "55",
pages = "3495--3499",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Hole traps and trivalent silicon centers in metal/oxide/silicon devices. / Lenahan, Patrick M.; Dressendorfer, P. V.

In: Journal of Applied Physics, Vol. 55, No. 10, 01.12.1984, p. 3495-3499.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hole traps and trivalent silicon centers in metal/oxide/silicon devices

AU - Lenahan, Patrick M.

AU - Dressendorfer, P. V.

PY - 1984/12/1

Y1 - 1984/12/1

N2 - We report electron spin resonance (ESR) measurements of E′-center (a "trivalent silicon" center in SiO2) density as well as capacitance versus voltage (C-V) measurements on γ-irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation-induced Pb -center (a "trivalent silicon" center at the Si/SiO2 interface) occupation as a function of the Fermi level at the Si/SiO2 interface. These measurements indicate that the Pb centers are neutral when the Fermi level is at mid-gap. Since the Pb centers are largely responsible for the radiation-induced interface states, one may take ΔVmg Cox/e (where ΔVmg is the "mid-gap" C-V shift, Cox is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation-induced E′ density equals ΔVmg C ox/e in oxides grown in both stream and dry oxygen. Etch-back experiments demonstrate that the E′ centers are concentrated very near the Si/SiO2 interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E′ density and ΔVmg annealing characteristics are virtually identical. We conclude that the E′ centers are largely responsible for the deep hole traps in thermal SiO2 on silicon. This observation coupled with observations regarding the Pb center indicates that two intrinsic centers, both involving silicon atoms lacking one bond to an oxygen atom, are largely responsible for the two electrically significant aspects of radiation damage in MOS devices: charge buildup in the oxide and interface-state creation at the Si/SiO2 interface.

AB - We report electron spin resonance (ESR) measurements of E′-center (a "trivalent silicon" center in SiO2) density as well as capacitance versus voltage (C-V) measurements on γ-irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation-induced Pb -center (a "trivalent silicon" center at the Si/SiO2 interface) occupation as a function of the Fermi level at the Si/SiO2 interface. These measurements indicate that the Pb centers are neutral when the Fermi level is at mid-gap. Since the Pb centers are largely responsible for the radiation-induced interface states, one may take ΔVmg Cox/e (where ΔVmg is the "mid-gap" C-V shift, Cox is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation-induced E′ density equals ΔVmg C ox/e in oxides grown in both stream and dry oxygen. Etch-back experiments demonstrate that the E′ centers are concentrated very near the Si/SiO2 interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E′ density and ΔVmg annealing characteristics are virtually identical. We conclude that the E′ centers are largely responsible for the deep hole traps in thermal SiO2 on silicon. This observation coupled with observations regarding the Pb center indicates that two intrinsic centers, both involving silicon atoms lacking one bond to an oxygen atom, are largely responsible for the two electrically significant aspects of radiation damage in MOS devices: charge buildup in the oxide and interface-state creation at the Si/SiO2 interface.

UR - http://www.scopus.com/inward/record.url?scp=0021427238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021427238&partnerID=8YFLogxK

U2 - 10.1063/1.332937

DO - 10.1063/1.332937

M3 - Article

VL - 55

SP - 3495

EP - 3499

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -