Hot electron relaxation in polar semiconductors

S. Das Sarma, J. K. Jain, R. Jalabert

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Theoretical results are obtained for the energy-loss of hot electrons to longitudinal optical phonons in three and two dimensional semiconductor (GaAs bulk and quantum well case) systems for carrier temperatures between 25K and 200K. All the relevant physical effects (quantum statistics, dynamical screening, plasmon-phonon coupling, Landau damping, hot phonon effects and quantum-well width corrections) are included in a many-body calculation. Our theory is in good agreement with experimental results and explains quantitatively an order of magnitude discrepancy in experimental relaxation rates in GaAs quantum wells reported by different groups as arising from a partial cancellation between plasmon-phonon mode-coupling and hot phonon effects, thus resolving an important controversy in the subject.

Original languageEnglish (US)
Pages (from-to)695-700
Number of pages6
JournalSolid State Electronics
Volume31
Issue number3-4
DOIs
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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