How material properties affect depth profiles - Insight from computer modeling

Robert J. Paruch, Zbigniew Postawa, Barbara J. Garrison

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A previously developed steady-state statistical sputtering model (SS-SSM) is useful for interpretation of molecular dynamics (MD) simulations of repetitive bombardment. This method is applicable to computer modeling of depth profiling. In this paper, we demonstrate how the formalism provided by SS-SSM is used to identify the factors that determine the depth resolution of δ-layer depth profiling. The analysis is based on MD simulations of repetitive keV C60 bombardment of coinage metal samples. The results show that the primary dependence of the depth profiling quality is on the sample binding energy, with bigger binding energies giving better depth resolution. The effects of sample atom mass and surface opacity are also discussed.

Original languageEnglish (US)
Pages (from-to)253-256
Number of pages4
JournalSurface and Interface Analysis
Volume46
Issue numberS1
DOIs
StatePublished - Nov 1 2014

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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