Hybrid ferromagnetic/semiconductor heterostructures for spintronics

Nitin Samarth, S. H. Chun, K. C. Ku, S. J. Potashnik, P. Schiffer

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

Original languageEnglish (US)
Pages (from-to)173-179
Number of pages7
JournalSolid State Communications
Volume127
Issue number2
DOIs
StatePublished - Jul 1 2003

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Magnetoelectronics
Heterojunctions
Semiconductor materials
Ferromagnetic materials
metals
Tunnel junctions
Photoconductivity
Diodes
tunnel junctions
photoconductivity
Metals
heterojunctions
diodes
injection

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Samarth, Nitin ; Chun, S. H. ; Ku, K. C. ; Potashnik, S. J. ; Schiffer, P. / Hybrid ferromagnetic/semiconductor heterostructures for spintronics. In: Solid State Communications. 2003 ; Vol. 127, No. 2. pp. 173-179.
@article{d065553b1717453384bab38a1dd9b767,
title = "Hybrid ferromagnetic/semiconductor heterostructures for spintronics",
abstract = "Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.",
author = "Nitin Samarth and Chun, {S. H.} and Ku, {K. C.} and Potashnik, {S. J.} and P. Schiffer",
year = "2003",
month = "7",
day = "1",
doi = "10.1016/S0038-1098(03)00340-5",
language = "English (US)",
volume = "127",
pages = "173--179",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "2",

}

Hybrid ferromagnetic/semiconductor heterostructures for spintronics. / Samarth, Nitin; Chun, S. H.; Ku, K. C.; Potashnik, S. J.; Schiffer, P.

In: Solid State Communications, Vol. 127, No. 2, 01.07.2003, p. 173-179.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hybrid ferromagnetic/semiconductor heterostructures for spintronics

AU - Samarth, Nitin

AU - Chun, S. H.

AU - Ku, K. C.

AU - Potashnik, S. J.

AU - Schiffer, P.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

AB - Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

UR - http://www.scopus.com/inward/record.url?scp=0038825820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038825820&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(03)00340-5

DO - 10.1016/S0038-1098(03)00340-5

M3 - Article

AN - SCOPUS:0038825820

VL - 127

SP - 173

EP - 179

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 2

ER -