Hybrid ferromagnetic/semiconductor heterostructures for spintronics

N. Samarth, S. H. Chun, K. C. Ku, S. J. Potashnik, P. Schiffer

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

Original languageEnglish (US)
Pages (from-to)173-179
Number of pages7
JournalSolid State Communications
Volume127
Issue number2
DOIs
StatePublished - Jul 1 2003

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Hybrid ferromagnetic/semiconductor heterostructures for spintronics'. Together they form a unique fingerprint.

Cite this