Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

Yuanyuan V. Li, Devin A. Mourey, Marsha A. Loth, Dalong A. Zhao, John E. Anthony, Thomas Nelson Jackson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.

Original languageEnglish (US)
Pages (from-to)2411-2417
Number of pages7
JournalOrganic Electronics
Volume14
Issue number10
DOIs
StatePublished - Jan 1 2013

Fingerprint

Atomic layer deposition
inks
atomic layer epitaxy
Ink
Zinc Oxide
Ink jet printing
Plasmas
Networks (circuits)
Zinc oxide
Leakage currents
Masks
inverters
printing
zinc oxides
Electric potential
leakage
masks
oxides
electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Li, Yuanyuan V. ; Mourey, Devin A. ; Loth, Marsha A. ; Zhao, Dalong A. ; Anthony, John E. ; Jackson, Thomas Nelson. / Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs. In: Organic Electronics. 2013 ; Vol. 14, No. 10. pp. 2411-2417.
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abstract = "We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.",
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Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs. / Li, Yuanyuan V.; Mourey, Devin A.; Loth, Marsha A.; Zhao, Dalong A.; Anthony, John E.; Jackson, Thomas Nelson.

In: Organic Electronics, Vol. 14, No. 10, 01.01.2013, p. 2411-2417.

Research output: Contribution to journalArticle

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