Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

Yuanyuan V. Li, Devin A. Mourey, Marsha A. Loth, Dalong A. Zhao, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.

Original languageEnglish (US)
Pages (from-to)2411-2417
Number of pages7
JournalOrganic Electronics
Volume14
Issue number10
DOIs
StatePublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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