We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering