Hybrid physical-chemical vapor transport growth of SiC bulk crystals

M. A. Fanton, Q. Li, A. Y. Polyakov, R. L. Cavalero, R. G. Ray, B. E. Weiland, M. Skowronski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using SIMS, DLTS and Hall effect measurements. Using this hybrid physical-chemical vapor transport (HPVT) approach, boules were grown using Ar-H2 and He-H2 mixtures with H2 concentrations up to 50 at%. Thermodynamic modeling suggests that addition of H2 improves the carbon transport in HPVT compared to standard PVT. This should lead to a substantial decrease in the concentration of residual N donors and the concentration of electron traps. This is confirmed by the experimental results. As expected, the source transport rate increased as H2 was added to the growth environment due to increased C transport. The background nitrogen concentration and the free electron density decreased significantly with increasing H2 concentration. The formation of electron traps (activation energies of 0.4 eV, 0.6-0.65 eV, 0.7 eV, 0.9 eV and 1 eV) was also strongly suppressed. These changes were observed for H2 concentrations as low as 4 at%. The decreased N concentration improves the ability to produce high resistivity SiC material, and for H2 concentrations as high as 10-25%, the very first wafers cut from the seed end of the boules have a resistivity exceeding 106 Ωcm.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages103-106
Number of pages4
EditionPART 1
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Vapors
vapors
Electron traps
Crystals
crystals
boules
Deep level transient spectroscopy
Hall effect
Secondary ion mass spectrometry
Carrier concentration
Seed
Nitrogen
Carbon
Activation energy
traps
Thermodynamics
electrical resistivity
secondary ion mass spectrometry
free electrons
seeds

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fanton, M. A., Li, Q., Polyakov, A. Y., Cavalero, R. L., Ray, R. G., Weiland, B. E., & Skowronski, M. (2006). Hybrid physical-chemical vapor transport growth of SiC bulk crystals. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 103-106). (Materials Science Forum; Vol. 527-529, No. PART 1).
Fanton, M. A. ; Li, Q. ; Polyakov, A. Y. ; Cavalero, R. L. ; Ray, R. G. ; Weiland, B. E. ; Skowronski, M. / Hybrid physical-chemical vapor transport growth of SiC bulk crystals. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. pp. 103-106 (Materials Science Forum; PART 1).
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abstract = "The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using SIMS, DLTS and Hall effect measurements. Using this hybrid physical-chemical vapor transport (HPVT) approach, boules were grown using Ar-H2 and He-H2 mixtures with H2 concentrations up to 50 at{\%}. Thermodynamic modeling suggests that addition of H2 improves the carbon transport in HPVT compared to standard PVT. This should lead to a substantial decrease in the concentration of residual N donors and the concentration of electron traps. This is confirmed by the experimental results. As expected, the source transport rate increased as H2 was added to the growth environment due to increased C transport. The background nitrogen concentration and the free electron density decreased significantly with increasing H2 concentration. The formation of electron traps (activation energies of 0.4 eV, 0.6-0.65 eV, 0.7 eV, 0.9 eV and 1 eV) was also strongly suppressed. These changes were observed for H2 concentrations as low as 4 at{\%}. The decreased N concentration improves the ability to produce high resistivity SiC material, and for H2 concentrations as high as 10-25{\%}, the very first wafers cut from the seed end of the boules have a resistivity exceeding 106 Ωcm.",
author = "Fanton, {M. A.} and Q. Li and Polyakov, {A. Y.} and Cavalero, {R. L.} and Ray, {R. G.} and Weiland, {B. E.} and M. Skowronski",
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Fanton, MA, Li, Q, Polyakov, AY, Cavalero, RL, Ray, RG, Weiland, BE & Skowronski, M 2006, Hybrid physical-chemical vapor transport growth of SiC bulk crystals. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 103-106, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Hybrid physical-chemical vapor transport growth of SiC bulk crystals. / Fanton, M. A.; Li, Q.; Polyakov, A. Y.; Cavalero, R. L.; Ray, R. G.; Weiland, B. E.; Skowronski, M.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 103-106 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Hybrid physical-chemical vapor transport growth of SiC bulk crystals

AU - Fanton, M. A.

AU - Li, Q.

AU - Polyakov, A. Y.

AU - Cavalero, R. L.

AU - Ray, R. G.

AU - Weiland, B. E.

AU - Skowronski, M.

PY - 2006/12/1

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N2 - The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using SIMS, DLTS and Hall effect measurements. Using this hybrid physical-chemical vapor transport (HPVT) approach, boules were grown using Ar-H2 and He-H2 mixtures with H2 concentrations up to 50 at%. Thermodynamic modeling suggests that addition of H2 improves the carbon transport in HPVT compared to standard PVT. This should lead to a substantial decrease in the concentration of residual N donors and the concentration of electron traps. This is confirmed by the experimental results. As expected, the source transport rate increased as H2 was added to the growth environment due to increased C transport. The background nitrogen concentration and the free electron density decreased significantly with increasing H2 concentration. The formation of electron traps (activation energies of 0.4 eV, 0.6-0.65 eV, 0.7 eV, 0.9 eV and 1 eV) was also strongly suppressed. These changes were observed for H2 concentrations as low as 4 at%. The decreased N concentration improves the ability to produce high resistivity SiC material, and for H2 concentrations as high as 10-25%, the very first wafers cut from the seed end of the boules have a resistivity exceeding 106 Ωcm.

AB - The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using SIMS, DLTS and Hall effect measurements. Using this hybrid physical-chemical vapor transport (HPVT) approach, boules were grown using Ar-H2 and He-H2 mixtures with H2 concentrations up to 50 at%. Thermodynamic modeling suggests that addition of H2 improves the carbon transport in HPVT compared to standard PVT. This should lead to a substantial decrease in the concentration of residual N donors and the concentration of electron traps. This is confirmed by the experimental results. As expected, the source transport rate increased as H2 was added to the growth environment due to increased C transport. The background nitrogen concentration and the free electron density decreased significantly with increasing H2 concentration. The formation of electron traps (activation energies of 0.4 eV, 0.6-0.65 eV, 0.7 eV, 0.9 eV and 1 eV) was also strongly suppressed. These changes were observed for H2 concentrations as low as 4 at%. The decreased N concentration improves the ability to produce high resistivity SiC material, and for H2 concentrations as high as 10-25%, the very first wafers cut from the seed end of the boules have a resistivity exceeding 106 Ωcm.

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M3 - Conference contribution

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SN - 9780878494255

T3 - Materials Science Forum

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BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

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Fanton MA, Li Q, Polyakov AY, Cavalero RL, Ray RG, Weiland BE et al. Hybrid physical-chemical vapor transport growth of SiC bulk crystals. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. 2006. p. 103-106. (Materials Science Forum; PART 1).