Hybrid physical–chemical vapor deposition of Bi2Se3 films

Joseph E. Brom, Lauren Weiss, Tanushree H. Choudhury, Joan M. Redwing

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Bi2Se3 thin films were grown on c-plane sapphire substrates by hybrid physical-chemical vapor deposition (HPCVD) using trimethyl bismuth (TMBi) and Se pellets. A Se-rich environment is created by evaporating Se pellets in the vicinity of the substrate, which is used to suppress the formation of Se vacancies. The effects of pre-cracking temperature and substrate/Se temperature on the growth rate, structural and electrical properties of the Bi2Se3 films were investigated. C-axis oriented films were obtained which show a reduction in the carrier concentration as pre-cracking temperature was increased from 290 °C (1.6×1019 cm−3) to 350 °C (8.4×1018 cm−3). An additional reduction in carrier concentration (7.28×1018 cm−3) was observed on increasing the substrate temperature from 200 to 260 °C.

Original languageEnglish (US)
Pages (from-to)230-234
Number of pages5
JournalJournal of Crystal Growth
Volume452
DOIs
StatePublished - Oct 15 2016

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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