Hybrid physical–chemical vapor deposition of Bi2Se3 films

Joseph E. Brom, Lauren Weiss, Tanushree H. Choudhury, Joan M. Redwing

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Bi2Se3 thin films were grown on c-plane sapphire substrates by hybrid physical-chemical vapor deposition (HPCVD) using trimethyl bismuth (TMBi) and Se pellets. A Se-rich environment is created by evaporating Se pellets in the vicinity of the substrate, which is used to suppress the formation of Se vacancies. The effects of pre-cracking temperature and substrate/Se temperature on the growth rate, structural and electrical properties of the Bi2Se3 films were investigated. C-axis oriented films were obtained which show a reduction in the carrier concentration as pre-cracking temperature was increased from 290 °C (1.6×1019 cm−3) to 350 °C (8.4×1018 cm−3). An additional reduction in carrier concentration (7.28×1018 cm−3) was observed on increasing the substrate temperature from 200 to 260 °C.

Original languageEnglish (US)
Pages (from-to)230-234
Number of pages5
JournalJournal of Crystal Growth
Volume452
DOIs
StatePublished - Oct 15 2016

Fingerprint

Vapor deposition
vapor deposition
Substrates
pellets
Carrier concentration
Temperature
Bismuth
temperature
Aluminum Oxide
Physical vapor deposition
Sapphire
bismuth
Vacancies
Structural properties
Chemical vapor deposition
sapphire
Electric properties
electrical properties
Thin films
thin films

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{fb7a015e99c6427a81dab40873e8fa64,
title = "Hybrid physical–chemical vapor deposition of Bi2Se3 films",
abstract = "Bi2Se3 thin films were grown on c-plane sapphire substrates by hybrid physical-chemical vapor deposition (HPCVD) using trimethyl bismuth (TMBi) and Se pellets. A Se-rich environment is created by evaporating Se pellets in the vicinity of the substrate, which is used to suppress the formation of Se vacancies. The effects of pre-cracking temperature and substrate/Se temperature on the growth rate, structural and electrical properties of the Bi2Se3 films were investigated. C-axis oriented films were obtained which show a reduction in the carrier concentration as pre-cracking temperature was increased from 290 °C (1.6×1019 cm−3) to 350 °C (8.4×1018 cm−3). An additional reduction in carrier concentration (7.28×1018 cm−3) was observed on increasing the substrate temperature from 200 to 260 °C.",
author = "Brom, {Joseph E.} and Lauren Weiss and Choudhury, {Tanushree H.} and Redwing, {Joan M.}",
year = "2016",
month = "10",
day = "15",
doi = "10.1016/j.jcrysgro.2016.02.027",
language = "English (US)",
volume = "452",
pages = "230--234",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

Hybrid physical–chemical vapor deposition of Bi2Se3 films. / Brom, Joseph E.; Weiss, Lauren; Choudhury, Tanushree H.; Redwing, Joan M.

In: Journal of Crystal Growth, Vol. 452, 15.10.2016, p. 230-234.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hybrid physical–chemical vapor deposition of Bi2Se3 films

AU - Brom, Joseph E.

AU - Weiss, Lauren

AU - Choudhury, Tanushree H.

AU - Redwing, Joan M.

PY - 2016/10/15

Y1 - 2016/10/15

N2 - Bi2Se3 thin films were grown on c-plane sapphire substrates by hybrid physical-chemical vapor deposition (HPCVD) using trimethyl bismuth (TMBi) and Se pellets. A Se-rich environment is created by evaporating Se pellets in the vicinity of the substrate, which is used to suppress the formation of Se vacancies. The effects of pre-cracking temperature and substrate/Se temperature on the growth rate, structural and electrical properties of the Bi2Se3 films were investigated. C-axis oriented films were obtained which show a reduction in the carrier concentration as pre-cracking temperature was increased from 290 °C (1.6×1019 cm−3) to 350 °C (8.4×1018 cm−3). An additional reduction in carrier concentration (7.28×1018 cm−3) was observed on increasing the substrate temperature from 200 to 260 °C.

AB - Bi2Se3 thin films were grown on c-plane sapphire substrates by hybrid physical-chemical vapor deposition (HPCVD) using trimethyl bismuth (TMBi) and Se pellets. A Se-rich environment is created by evaporating Se pellets in the vicinity of the substrate, which is used to suppress the formation of Se vacancies. The effects of pre-cracking temperature and substrate/Se temperature on the growth rate, structural and electrical properties of the Bi2Se3 films were investigated. C-axis oriented films were obtained which show a reduction in the carrier concentration as pre-cracking temperature was increased from 290 °C (1.6×1019 cm−3) to 350 °C (8.4×1018 cm−3). An additional reduction in carrier concentration (7.28×1018 cm−3) was observed on increasing the substrate temperature from 200 to 260 °C.

UR - http://www.scopus.com/inward/record.url?scp=84959259380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959259380&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.02.027

DO - 10.1016/j.jcrysgro.2016.02.027

M3 - Article

AN - SCOPUS:84959259380

VL - 452

SP - 230

EP - 234

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -