Hybrid technique for mass synthesis of field effect transistors using gallium nitride nanowires

Son Nguyen, Joan Zdenka Delalic, Jeffrey M. Catchmark

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To date, there have been many researches on the characteristics, the control of the size and location of gallium nitride nanowires (GaN NWs); however, mass production of electronic devices is still being studied. This paper proposes a hybrid method to fabricate arrays of n-type Field Effect Transistors (FET) using GaN NWs. The fabrication process involves both top-down and bottom-up techniques. The former will be used to obtain the gates and metal contacts in the transistors, and to determine the desired locations of catalytic particles (gold) needed for chemical reaction to grow NWs. The latter will help in the development of a uniform channel (with desired diameter and characteristic) between the source and the drain terminals. The success of the research will eliminate the problem of "pick and place" in the fabrication process. Ultimately, this will lead to high volume manufacturing of building blocks for integrated circuits.

Original languageEnglish (US)
Title of host publicationProceedings - 2005 International Symposium on Microelectronics, IMAPS 2005
Pages238-243
Number of pages6
StatePublished - 2005
Event38th International Symposium on Microelectronics, IMAPS 2005 - Philadelphia, PA, United States
Duration: Sep 25 2005Sep 29 2005

Publication series

NameProceedings - 2005 International Symposium on Microelectronics, IMAPS 2005

Other

Other38th International Symposium on Microelectronics, IMAPS 2005
CountryUnited States
CityPhiladelphia, PA
Period9/25/059/29/05

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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