To date, there have been many researches on the characteristics, the control of the size and location of gallium nitride nanowires (GaN NWs); however, mass production of electronic devices is still being studied. This paper proposes a hybrid method to fabricate arrays of n-type Field Effect Transistors (FET) using GaN NWs. The fabrication process involves both top-down and bottom-up techniques. The former will be used to obtain the gates and metal contacts in the transistors, and to determine the desired locations of catalytic particles (gold) needed for chemical reaction to grow NWs. The latter will help in the development of a uniform channel (with desired diameter and characteristic) between the source and the drain terminals. The success of the research will eliminate the problem of "pick and place" in the fabrication process. Ultimately, this will lead to high volume manufacturing of building blocks for integrated circuits.