Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors

Blair Richard Tuttle, William McMahon, Karl Hess

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation.

Original languageEnglish (US)
Pages (from-to)229-233
Number of pages5
JournalSuperlattices and Microstructures
Volume27
Issue number2
DOIs
StatePublished - Jan 1 2000

Fingerprint

Hot electrons
MOSFET devices
hot electrons
metal oxide semiconductors
Hydrogen
field effect transistors
Defects
defects
hydrogen
electrons
Silicon
Silicon Dioxide
Density functional theory
Silica
degradation
silicon dioxide
Degradation
microstructure
Microstructure
silicon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{4f1519f18fe64aea897905f1f231cdb0,
title = "Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors",
abstract = "We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation.",
author = "Tuttle, {Blair Richard} and William McMahon and Karl Hess",
year = "2000",
month = "1",
day = "1",
doi = "10.1006/spmi.1999.0804",
language = "English (US)",
volume = "27",
pages = "229--233",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "2",

}

Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors. / Tuttle, Blair Richard; McMahon, William; Hess, Karl.

In: Superlattices and Microstructures, Vol. 27, No. 2, 01.01.2000, p. 229-233.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors

AU - Tuttle, Blair Richard

AU - McMahon, William

AU - Hess, Karl

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation.

AB - We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation.

UR - http://www.scopus.com/inward/record.url?scp=0033742002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033742002&partnerID=8YFLogxK

U2 - 10.1006/spmi.1999.0804

DO - 10.1006/spmi.1999.0804

M3 - Article

AN - SCOPUS:0033742002

VL - 27

SP - 229

EP - 233

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 2

ER -