Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors

Blair R. Tuttle, William McMahon, Karl Hess

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation.

Original languageEnglish (US)
Pages (from-to)229-233
Number of pages5
JournalSuperlattices and Microstructures
Volume27
Issue number2
DOIs
StatePublished - Feb 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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