Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Osama O. Awadelkarim, S. J. Fonash, P. I. Mikulan, M. Ozaita, Y. D. Chan

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.

Original languageEnglish (US)
Pages (from-to)47-50
Number of pages4
JournalMicroelectronic Engineering
Volume28
Issue number1-4
DOIs
StatePublished - Jan 1 1995

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Hardware and Architecture

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