Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Osama O. Awadelkarim, S. J. Fonash, P. I. Mikulan, M. Ozaita, Y. D. Chan

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.

Original languageEnglish (US)
Pages (from-to)47-50
Number of pages4
JournalMicroelectronic Engineering
Volume28
Issue number1-4
DOIs
StatePublished - Jan 1 1995

Fingerprint

Passivation
Oxides
passivity
Hydrogen
CMOS
Annealing
chemistry
damage
Plasmas
Defects
annealing
oxides
defects
Beam plasma interactions
hydrogen
Processing
charging
field effect transistors
interactions
fluoroform

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Hardware and Architecture

Cite this

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abstract = "The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.",
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Hydrogen and processing damage in CMOS device reliability : defect passivation and depassivation during plasma exposures and subsequent annealing. / Awadelkarim, Osama O.; Fonash, S. J.; Mikulan, P. I.; Ozaita, M.; Chan, Y. D.

In: Microelectronic Engineering, Vol. 28, No. 1-4, 01.01.1995, p. 47-50.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogen and processing damage in CMOS device reliability

T2 - defect passivation and depassivation during plasma exposures and subsequent annealing

AU - Awadelkarim, Osama O.

AU - Fonash, S. J.

AU - Mikulan, P. I.

AU - Ozaita, M.

AU - Chan, Y. D.

PY - 1995/1/1

Y1 - 1995/1/1

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AB - The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.

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