Hydrogen-enhanced transformation of electrical and structural properties of thin subsurface ion implanted silicon layer in SiO2-Si systems

E. I. Terukov, B. J. Ber, V. Kh Kudojarova, V. Ju Davydov, A. N. Nazarov, Ja N. Vovk, S Ashok

Research output: Contribution to journalConference article

Abstract

Co-implantation by As+ and H+(or D+) ions into the subsurface silicon layer of SiO2-Si structures has been performed in order to assess the role of hydrogen on dopant activation as well as structural transformation of Si under thermal anneal. The influence of the hydrogen co-implant on the electrical and structural properties of the amorphized subsurface silicon layer following thermal anneal at 300-800 °C has been evaluated by 4-point probe, Raman scattering and SIMS techniques. A considerable increase in the microcrystalline part in the subsurface amorphous implanted silicon layer has been revealed by Raman analysis of the (As++D+) co-implanted samples after a 400 °C-15 min. thermal anneal (deuterium dose was 1×1014 ions/cm2). The results also suggest perceptible effects of hydrogen on the dangling bond passivation and enhanced dopant activation.

Original languageEnglish (US)
Pages (from-to)595-600
Number of pages6
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Volume69
StatePublished - Jan 1 1999
EventProceedings of the 1999 8th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '99) - Hoor, Swed
Duration: Sep 25 1999Sep 28 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

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    Terukov, E. I., Ber, B. J., Kudojarova, V. K., Davydov, V. J., Nazarov, A. N., Vovk, J. N., & Ashok, S. (1999). Hydrogen-enhanced transformation of electrical and structural properties of thin subsurface ion implanted silicon layer in SiO2-Si systems. Diffusion and Defect Data Pt.B: Solid State Phenomena, 69, 595-600.