Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching

O. O. Awadelkarim, P. I. Mikulan, T. Gu, S. J. Fonash, R. A. Ditizio

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF3-based chemistries were studied using SiO2/Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.

Original languageEnglish (US)
Pages (from-to)85-87
Number of pages3
JournalIEEE Electron Device Letters
Volume15
Issue number3
DOIs
StatePublished - Mar 1994

Fingerprint

Permeation
Hydrogen
Etching
Defects
Magnetic fields
Deep level transient spectroscopy
Reactive ion etching
Substrates
Capacitance
Electric potential
fluoroform

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Awadelkarim, O. O. ; Mikulan, P. I. ; Gu, T. ; Fonash, S. J. ; Ditizio, R. A. / Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching. In: IEEE Electron Device Letters. 1994 ; Vol. 15, No. 3. pp. 85-87.
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Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching. / Awadelkarim, O. O.; Mikulan, P. I.; Gu, T.; Fonash, S. J.; Ditizio, R. A.

In: IEEE Electron Device Letters, Vol. 15, No. 3, 03.1994, p. 85-87.

Research output: Contribution to journalArticle

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