Hydrogen plasma modification of metal/GaAs interface

Y. G. Wang, S. Ashok

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.

Original languageEnglish (US)
Pages (from-to)513-517
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Volume170
Issue number1-4
DOIs
StatePublished - Apr 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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