Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

B. R. Tuttle, K. Hess, L. F. Register

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si-H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.

Original languageEnglish (US)
Pages (from-to)441-445
Number of pages5
JournalSuperlattices and Microstructures
Volume27
Issue number5
DOIs
StatePublished - May 2000
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: Dec 6 1999Dec 10 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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