Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

B. R. Tuttle; K. Hess; L. F. Register

doi:10.1006/spmi.2000.0859

Hydrogen-related defect creation at the Si(100)-SiO₂ interface of metal-oxide-semiconductor field effect transistors during hot electron stress

B. R. Tuttle, K. Hess, L. F. Register

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO₂ interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si-H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.

Original language	English (US)
Pages (from-to)	441-445
Number of pages	5
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0859
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0859

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@article{e555f3c73115417e8a1dba7bc81d8821,

title = "Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress",

abstract = "We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si-H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.",

author = "Tuttle, {B. R.} and K. Hess and Register, {L. F.}",

note = "Funding Information: Acknowledgements—We gratefully acknowledge stimulating interactions and collaborations with R. Martin, M. Staedele and C. G. Van de Walle. We also would like to acknowledge funding from the NSF (through DesCartES) and ONR (MURI Grant No. N00014-98-I-0604). Calculations were performed on SGI-ORIGIN2000 machines at NCSA in Urbana, IL.; 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

year = "2000",

month = may,

doi = "10.1006/spmi.2000.0859",

language = "English (US)",

volume = "27",

pages = "441--445",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "5",

}

TY - JOUR

T1 - Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

AU - Tuttle, B. R.

AU - Hess, K.

AU - Register, L. F.

N1 - Funding Information: Acknowledgements—We gratefully acknowledge stimulating interactions and collaborations with R. Martin, M. Staedele and C. G. Van de Walle. We also would like to acknowledge funding from the NSF (through DesCartES) and ONR (MURI Grant No. N00014-98-I-0604). Calculations were performed on SGI-ORIGIN2000 machines at NCSA in Urbana, IL.

PY - 2000/5

Y1 - 2000/5

N2 - We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si-H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.

AB - We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si-H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.

UR - http://www.scopus.com/inward/record.url?scp=0034187449&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034187449&partnerID=8YFLogxK

U2 - 10.1006/spmi.2000.0859

DO - 10.1006/spmi.2000.0859

M3 - Conference article

AN - SCOPUS:0034187449

SN - 0749-6036

VL - 27

SP - 441

EP - 445

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Hydrogen-related defect creation at the Si(100)-SiO₂ interface of metal-oxide-semiconductor field effect transistors during hot electron stress

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